Diodes ZXMN6A11Z User Manual
f
D
Product Summary
V
R
(BR)DSS
60V
120mΩ @ V
180mΩ @ VGS = 4.5V
DS(on)
Max
= 10V
GS
A Product Line o
Diodes Incorporated
ZXMN6A11Z
60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE
Features and Benefits
I
max
D
T
= 25°C
A
(Note 5)
3.6A
2.9A
• Low On-Resistance
• Low Threshold
• Fast Switching Speed
• Low Gate Drive
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
• DC-DC Converters
ADVANCE INFORMATION
• Power Management functions
• Motor control
• Disconnect switches
SOT89
Top View
G
Device symbol
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (approximate)
S
Top View
Pin-Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A11ZTA 11N6 7 12 1,000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
11N6
11N6 = Product type Marking Code
1 of 7
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ZXMN6A11Z
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
@ V
@ V
@ V
= 10V ; T
GS
= 10V ; T
GS
= 10V ; T
GS
= 25°C (Note 5)
A
= 75°C (Note 5)
A
= 25°C (Note 4)
A
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
6. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature.
PD
P
D
R
θJA
R
θJA
T
, T
J
STG
60 V
±20 V
3.6
2.9
A
2.7
14.5 A
3.7 A
14.5 A
1.5
12
2.6
21
W
mW/°C
W
mW/°C
83.3 °C/W
47.4 °C/W
-55 to +150 °C
Thermal Characteristics
R
DS(on)
10
Limited
1
DC
100m
Single Pulse
Drain Current (A)
D
T
=25°C
amb
VDS Drain-Source Voltage (V)
Safe Operating Area
90
T
=25°C
80
amb
70
60
50
D=0.5
40
30
D=0.2
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Transient Thermal Impedance
Thermal Re si stance (°C/ W )
I
10m
1s
100ms
10ms
1ms
100µs
110
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
T
=25°C
amb
Pulse Power Dissipation
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
2 of 7
www.diodes.com
December 2011
© Diodes Incorporated
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A Product Line o
Diodes Incorporated
ZXMN6A11Z
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
60 - - V
- - 1.0
- - 100 nA
VGS = 0V, ID = 250μA
μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7 & 9)
Diodes Forward Voltage (Note 7)
V
GS(th
R
DS (ON)
g
V
FS
SD
1 - 2.2 V
-
- 120
-
180
- 4.9 - S
- 0.85 0.95 V
VDS = VGS, ID = 250μA
= 10V, ID = 2.5A
V
mΩ
GS
V
= 4.5V, ID = 2A
GS
VDS = 15V, ID = 2.5A
TJ = 25°C, IS = 2.8A, VGS = 10V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
Output Capacitance (Note 8 & 9)
Reverse Transfer Capacitance (Note 8 & 9)
ADVANCE INFORMATION
Gate Charge (Note 8 & 9)
Total Gate Charge (Note 8 & 9)
Gate-Source Charge (Note 8 & 9)
Gate-Drain Charge (Note 8 & 9)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time (Note 8 & 9)
Turn-On Rise Time (Note 8 & 9)
Turn-Off Delay Time (Note 8 & 9)
Turn-Off Fall Time (Note 8 & 9)
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
C
C
t
t
C
Q
Q
Q
Q
t
Q
D(on
D(off
iss
oss
rss
r
t
t
s
d
r
f
- 330 - pF
- 35.2 - pF
- 17.1 - pF
- 3 - nC
- 5.7 - nC
- 1.25 - nC
- 0.86 - nC
21.5 ns
20.5 nC
V
DS
f = 1.0MHz
VGS = 5V, VDS = 15V, ID = 2.5A
V
GS
I
D
T
J
di/dt = 100A/μs
- 1.95 - ns
- 3.5 - ns
- 8.2 - ns
V
GS
R
G
- 4.6 - ns
= 40V, VGS = 0V,
= 10V, VDS = 15V,
= 2.5A
= 25°C, IS = 2.5A,
= 10V, VDD = 30V,
= 6Ω , ID = 2.5A
]
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
3 of 7
www.diodes.com
December 2011
© Diodes Incorporated
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