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f
Product Summary
I
V
R
(BR)DSS
120m @ V
60V
180m @ VGS= 4.5V
DS(on)
GS
= 10V
T
= 25°C
A
4.4A
3.5A
D
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor Control
• Uninterrupted power supply
SOT223
Top View
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Diodes Incorporated
ZXMN6A11G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
D
G
S
Pin Out - Top
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A11GTA See below 7 12 1,000
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
ZXMN
6A11
ZXMN = Product Type Marking Code, Line 1
6A11 = Product Type Marking Code, Line 2
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ZXMN6A11G
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
(Note 3)
Continuous Drain Current
V
= 10V
GS
TA = 70°C (Note 3)
(Note 2)
Pulsed Drain Current
V
= 10V
GS
(Note 4)
Continuous Source Current (Body Diode) (Note 3)
Pulsed Source Current (Body Diode) (Note 4)
V
V
DSS
GS
ID
IDM
I
S
I
SM
60
±20
4.4
3.5
3.1
15.6
5
15.6
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 32.0
R
R
T
J, TSTG
JA
JL
2.0
16
3.9
W
mW/°C
31
62.5
°C/W
9.8
-55 to +150 °C
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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Thermal Characteristics
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Diodes Incorporated
ZXMN6A11G
R
DS(on)
10
Limited
1
DC
1s
100m
Drain Current (A)
D
10m
I
T
amb
25mm x 25 mm
1oz FR4
100ms
=25°C
110
10ms
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
T
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
=25°C
amb
25mm x 25 mm
1oz FR4
D=0.5
D=0.2
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
25mm x 25 mm
1oz FR4
Derating Curve
Single Pulse
T
=25°C
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
amb
25mm x 25mm
1oz FR4
Pulse Width (s)
Puls e Power D is sipatio n
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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)
r
r
g
g
g
g
)
r
)
Product Line o
Diodes Incorporated
ZXMN6A11G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
60
⎯ ⎯
⎯ ⎯
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
V
GS(th
R
DS (ON)
V
g
fs
SD
t
r
Q
r
1.0
⎯
⎯
⎯
⎯
⎯
⎯
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes: 6. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
C
C
t
t
C
oss
rss
Q
Q
Q
Q
D(on
t
D(off
t
iss
s
d
f
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
1.0
±100
⎯
3.0 V
0.105 0.120
0.150 0.180
4.9
⎯
V
μA
nA
S
0.85 0.95 V
21.5
20.5
330
35.2
17.1
3.0
5.7
1.25
0.86
1.95
3.5
8.2
4.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
nC
pF
nC
ns
ID = 250μA, VGS = 0V
= 60V, VGS = 0V
V
DS
V
= ±20V, VDS = 0V
GS
ID = 250μA, VDS = VGS
V
= 10V, ID = 2.5A
GS
VGS = 4.5V, ID = 2A
VDS = 15V, ID = 2.5A
I
= 2.8A, VGS = 0V, TJ = 25°C
S
I
= 2.8A, di/dt = 100A/μs
S
= 25°C
T
J
V
= 40V, VGS = 0V,
DS
f = 1.0MHz
V
= 4.5V
GS
V
= 15V
DS
I
= 10V
V
GS
V
= 30V, ID = 2.5A,
DD
R
= 6Ω, VGS = 10V
G
= 2.5A
D
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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Typical Characteristics
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Diodes Incorporated
ZXMN6A11G
T = 25°C
10
1
0.1
Drain Current (A)
D
I
0.1 1 10
10V 5V
4V
3.5V
3V
V
2.5V
GS
VDS Drain-Source Voltage (V)
Output C haracteristics
10
VDS = 10V
T = 150°C
1
T = 25°C
Drain Current (A)
0.1
D
I
2345
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
T = 150°C
10
1
0.1
Drain Current (A)
D
I
0.1 1 10
10V
5V
VDS Drain - So urce Vol ta g e ( V)
Output C haracteristics
1.8
GS(th)
1.6
1.4
and V
1.2
DS(on)
1.0
0.8
0.6
0.4
-50 0 50 100 150
Normalised R
Tj Junction Temperatu r e (°C)
VGS = 10V
ID = 2.5A
VGS = V
DS
ID = 250uA
Normalised Curves v Tem p erature
4V
3.5V
3V
2.5V
V
GS
2V
R
DS(on)
V
GS(th)
1
3V
0.1
T = 2 5°C
Drain-Source On-Resistance (Ω)
DS(on)
R
On-Resistance v Drain Cu rrent
3.5V
110
ID Drain Current (A)
4V
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
4.5V
V
GS
5V
10V
0.1
Reverse Drain Current (A)
SD
I
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10
1
T = 150°C
T = 25°C
0.4 0.6 0.8 1.0 1.2
VSD Source-Drain Vol tage (V)
Source-Drain Diode Forward Voltage
© Diodes Incorporated
October 2010
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Typical Characteristics - continued
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Diodes Incorporated
ZXMN6A11G
500
400
300
200
100
C Capacitance (pF)
Capacitance v D rain-Source Voltage
Test Circuit
C
ISS
C
OSS
C
RSS
0
110
VDS - Drain - Source Voltage (V)
Q
G
VGS = 0V
f = 1MHz
10
ID = 2.5A
8
6
4
2
Gate-Sou rce Voltage (V )
0
GS
0123456
V
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Current
regulator
12V
50k
Same as
VDS = 30V
D.U. T
Q
V
GS
G
Q
GD
V
I
G
D.U.T
V
GS
DS
I
D
Charge
Basicgatechargewaveform
V
DS
90%
10%
V
GS
t
d(on)tr
t
t
(on)
d(off)
t
r
t
(on)
Switching time waveforms
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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Gate charge test circuit
R
D
V
GS
R
G
Switching time test circuit
V
DS
© Diodes Incorporated
V
DD
October 2010
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Package Outline Dimensions
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Diodes Incorporated
ZXMN6A11G
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
DIM
Millimeters Inches
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
Suggested Pad Layout
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
1.5
0.059
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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2.3
0.091
mm
inches
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© Diodes Incorporated
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Product Line o
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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Diodes Incorporated
ZXMN6A11G
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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