Diodes ZXMN6A11G User Manual
A
f
Product Summary
I
V
R
(BR)DSS
120m @ V
60V
180m @ VGS= 4.5V
DS(on)
GS
= 10V
T
= 25°C
A
4.4A
3.5A
D
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor Control
• Uninterrupted power supply
SOT223
Top View
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Diodes Incorporated
ZXMN6A11G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• “Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
D
G
S
Pin Out - Top
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A11GTA See below 7 12 1,000
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
ZXMN
6A11
ZXMN = Product Type Marking Code, Line 1
6A11 = Product Type Marking Code, Line 2
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ZXMN6A11G
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
(Note 3)
Continuous Drain Current
V
= 10V
GS
TA = 70°C (Note 3)
(Note 2)
Pulsed Drain Current
V
= 10V
GS
(Note 4)
Continuous Source Current (Body Diode) (Note 3)
Pulsed Source Current (Body Diode) (Note 4)
V
V
DSS
GS
ID
IDM
I
S
I
SM
60
±20
4.4
3.5
3.1
15.6
5
15.6
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 32.0
R
R
T
J, TSTG
JA
JL
2.0
16
3.9
W
mW/°C
31
62.5
°C/W
9.8
-55 to +150 °C
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
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Thermal Characteristics
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ZXMN6A11G
R
DS(on)
10
Limited
1
DC
1s
100m
Drain Current (A)
D
10m
I
T
amb
25mm x 25 mm
1oz FR4
100ms
=25°C
110
10ms
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
T
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
=25°C
amb
25mm x 25 mm
1oz FR4
D=0.5
D=0.2
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
25mm x 25 mm
1oz FR4
Derating Curve
Single Pulse
T
=25°C
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
amb
25mm x 25mm
1oz FR4
Pulse Width (s)
Puls e Power D is sipatio n
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
3 of 8
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October 2010
© Diodes Incorporated
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