Diodes ZXMN6A11DN8 User Manual
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
0.120 @ V
0.180 @ V
(⍀) I
DS(on)
GS
GS
(A)
D
= 10V 3.2
= 4.5V 2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
G1
Applications
• DC-DC converters
D1
S1
D2
G2
S2
• Power management functions
• Motor control
Ordering information
Device Reel size
(inches)
ZXMN6A11DN8TA 7 12 500
Tape width
(mm)
Quantity
per reel
G1
S2
G2
Pin out - top view
D1S1
D1
D2
D2
Device marking
ZXMN
6A11D
Issue 3 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
@ V
@ V
Pulsed drain current
(c)
= 10V; T
GS
= 10V; T
GS
= 10V; T
GS
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
amb
=25°C
(c)
(a)(d)
amb
amb
amb
(b)
=25°C
=70°C
=25°C
(b)
(b)
(a)
DSS
I
I
DM
I
I
SM
P
GS
D
S
D
Linear derating factor 10 mW/°C
Power dissipation at T
amb
=25°C
(a)(e)
P
D
Linear derating factor 14 mW/°C
Power dissipation at T
amb
=25°C
(b)(d)
P
D
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j
, T
stg
60 V
±20 V
3.2 A
2.6
2.5
13.7 A
3.1 A
13.7 A
1.25 W
1.8 W
2.1 W
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(a)(d)
(a)(e)
(b)(d)
R
R
R
⍜JA
⍜JA
⍜JA
100 °C/W
70 °C/W
60 °C/W
Issue 3 - September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Typical characteristics
ZXMN6A11DN8
Issue 3 - September 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
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