Diodes ZXMN6A09K User Manual

A

f

D

Product Summary

Max I

BV

Max R

DSS

60V

40mΩ @ V

60mΩ @ VGS = 4.5V

DS(on)

= 10V

GS

T

= 25°C

A

(Note 3)

7.7A

6.3A

D

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

TO252

GS

Top View Pin Out -Top View Equivalent Circuit

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

Green

ZXMN6A09K

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• Low gate drive

• Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish. Solderable per MIL-STD-202,

Method 208

• Weight: 0.33 grams (approximate)

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Ordering Information (Note 1 & 2)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN6A09KTC ZXMN6A09 13 16 2,500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

ZXMN6A09 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01 - 53)

ZXMN6A09K

Document Number DS33569 Rev. 6 - 2

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ZXMN6A09K

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

Continuous Drain current

V

= 10V

GS

(Note 4)
TA = 70°C (Note 4)

V

DSS

V

GS

I

D

60 V

±20

V

11.8

9.6

A

(Note 3) 7.7
Pulsed Drain current (Note 5)
Continuous Source current (Body diode) (Note 4)
Pulsed Source current (Body diode) (Note 5)

I

DM

I

S

I

SM

43 A

10.8 A
43 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

(Note 3)

Power dissipation
Linear derating factor

(Note 4)

P

D

(Note 6)
(Note 3)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Note 7)
Operating and storage temperature range

Notes: 3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

4. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.

5. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 4) 12.3
(Note 6) 58.1

R

JA

θ

R

JL

, T

T

J

STG

4.3

34.4

10.1

80.8

2.15

17.2
29

1.04

-55 to 150

W

mW/°C

°C/W

°C

ZXMN6A09K

Document Number DS33569 Rev. 6 - 2

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Thermal Characteristics

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ZXMN6A09K

R

DS(on)

Limit

10

1

DC

1s

100m

Drain Current (A)

D

I

10m

100ms

T

=25°C

amb

25mm x 25mm

1oz FR4

10ms

1ms

100µs

1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

60

50
40

30
20

10

100µ 1m 10m 100m 1 10 100 1k

Therm a l Resistance ( °C/W)

25mm x 25mm

D=0.5

D=0.2

0

T

=25°C

amb

1oz FR4

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedance

R

DS(on)

Limit

10

DC

100m

Drain Current (A)

D

I

10m

1

1s

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

10ms

1ms

100µs

1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

30

T

=25°C

25

amb

50mm x 50mm

2oz FR4

20

D=0.5

15
10

D=0.2

5
0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

D=0.1

D=0.05

Single Pulse

Transient Thermal Impedance

4.5

100

10

Single Pulse

T

=25°C

amb

50mm x 50mm

2oz FR4

4.0

3.5

3.0

2.5

2.0

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

1.5

25mm x 25mm

1oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipat i o n (W)

Pulse Width (s)

Pulse Power Dissipation

ZXMN6A09K

Document Number DS33569 Rev. 6 - 2

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1.0

0.5

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipat i o n (W)

Temperature (°C)

Derating Curve

March 2012

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