ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
0.040 @ V
0.060 @ V
() I
= 10V 7.5
GS
= 4.5V 6.2
GS
D
(A)
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
Applications
• DC-DC converters
• Power management functions
D
G
S
S
• Disconnect switches
• Motor control
D
Pinout - top view
D
G
Ordering information
Device Reel size
(inches)
ZXMN6A09GTA 7 12 1000
Tape width
(mm)
Quantity
per reel
Device marking
ZXMN
6A09
Issue 3 - June 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMN6A09G
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
@ V
@ V
Pulsed drain current
(c)
=10V; T
GS
=10V; T
GS
=10V; T
GS
Continuous source current (body diode)
(a)
(c)
Pulsed source current (body diode)
Power dissipation at T
amb
=25°C
amb
amb
amb
(b)
=25°C
=70°C
=25°C
(b)
(b)
(a)
DSS
I
I
DM
I
I
SM
P
GS
D
S
D
Linear derating factor 16 mW/°C
Power dissipation at T
amb
=25°C
(b)
P
D
Linear derating factor 31 mW/°C
Operating and storage temperature range T
j
, T
stg
60 V
±20 V
7.5 A
6
5.4
33 A
3.5 A
33 A
2W
3.9 W
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction
temperature.
(a)
(b)
R
R
JA
JA
62.5 °C/W
32.2 °C/W
Issue 3 - June 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Characteristics
ZXMN6A09G
Issue 3 - June 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007