Diodes ZXMN6A09G User Manual

ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET

Summary

V

(BR)DSS

60

R

DS(on)

0.040 @ V

0.060 @ V

() I

= 10V 7.5

GS

= 4.5V 6.2

GS

D

(A)

Description

This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT223 package

Applications

• DC-DC converters

• Power management functions

D

G

S

S

• Disconnect switches

• Motor control

D

Pinout - top view

D

G

Ordering information

Device Reel size

(inches)

ZXMN6A09GTA 7 12 1000

Tape width

(mm)

Quantity

per reel

Device marking

ZXMN
6A09

Issue 3 - June 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMN6A09G

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

@ V

@ V

Pulsed drain current

(c)

=10V; T

GS

=10V; T

GS

=10V; T

GS

Continuous source current (body diode)

(a)

(c)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

amb

amb

amb

(b)

=25°C

=70°C

=25°C

(b)

(b)

(a)

DSS

I

I

DM

I

I

SM

P

GS

D

S

D

Linear derating factor 16 mW/°C

Power dissipation at T

amb

=25°C

(b)

P

D

Linear derating factor 31 mW/°C

Operating and storage temperature range T

j

, T

stg

60 V

±20 V

7.5 A

6

5.4

33 A

3.5 A

33 A

2W

3.9 W

-55 to +150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction

temperature.

(a)

(b)

R

R

JA

JA

62.5 °C/W

32.2 °C/W

Issue 3 - June 2007 2 www.zetex.com

© Zetex Semiconductors plc 2007

Characteristics

ZXMN6A09G

Issue 3 - June 2007 3 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMN6A09G

NOTES:

Electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate-body leakage I

Gate-source threshold voltage V

Static drain-source on-state

(*)

(‡)

(*)(‡)

resistance

Forward transconductance

Dynamic

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Switching

(†) (‡)

Turn-on-delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Total gate charge Q

Gate-source charge Q

Gate drain charge Q

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

60 V ID= 250A, VGS=0V

1 AVDS= 60V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 3.0 V ID= 250A, VDS=V

0.040  VGS= 10V, ID= 8.2A

0.060  V

= 4.5V, ID = 7.4A

GS

15 S VDS= 15V, ID= 8.2A

1407 pF VDS= 40V, VGS=0V

121 pF

f=1MHz

59 pF

4.9 ns VDD= 15V, ID= 3.5A
≅6.0, VGS= 10V

R

5.0 ns

G

25.3 ns

4.6 ns

12.4 nC VDS= 15V, VGS= 5V
= 3.5A

I

D

24.2 nC VDS= 15V, VGS= 5V
= 3.5A

I

5.2 nC

D

3.5 nC

Source-drain diode

Diode forward voltage

Reverse recovery time

(*)

(‡)

Reverse recovery charge

(‡)

V

SD

t

rr

Q

rr

0.85 0.95 V Tj=25°C, IS= 6.6A,

=0V

V

GS

26.3 ns Tj=25°C, IS= 3.5A,

26.6 nC

di/dt=100A/s

GS

(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.

Issue 3 - June 2007 4 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

ZXMN6A09G

Issue 3 - June 2007 5 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)tr

t

r

t

d(off)

V

DS

DD

V

R

D

R

G

V

DS

I

D

I

G

ZXMN6A09G

Issue 3 - June 2007 6 www.zetex.com

© Zetex Semiconductors plc 2007

Package outline - SOT223

ZXMN6A09G

DIM Millimeters Inches DIM Millimeters Inches

Min Max Min Max Min Max Min Max

A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC

A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287

b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146

C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -

D 6.30 6.70 0.248 0.264 - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Issue 3 - June 2007 7 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMN6A09G

Definitions
Product change

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.

Life support

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body

or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

Reproduction

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.

Terms and Conditions

All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.

Quality of product

Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.

Green compliance

Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg­ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.

Product status key:

“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
“Obsolete” Production has been discontinued

Datasheet status key:

“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which

“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to

Zetex sales offices

Europe

Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: [phone]
Fax: [phone]
[e-mail]

© 2007 Published by Zetex Semiconductors plc

Device is still in production to support existing designs and production

may change in any manner without notice.

However, changes to the test conditions and specifications may occur, at any time and without notice.

specifications may occur, at any time and without notice.

Americas

Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA

Telephone: [phone]
Fax: [phone]
[e-mail]

Asia Pacific

Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong

Telephone: [phone]
Fax: [phone]
[e-mail]

Corporate Headquarters

Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom

Telephone: [phone]
Fax: [phone]
[e-mail]

Issue 3 - June 2007 8 www.zetex.com

© Zetex Semiconductors plc 2007