Diodes ZXMN6A09DN8 User Manual
ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
0.040 @ V
0.060 @ V
() I
= 10V 5.6
GS
= 4.5V 4.6
GS
D
(A)
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOIC package
G1
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
D1
S1
G1
S2
G2
D2
G2
S2
D1S1
D1
D2
D2
Top view
Ordering information
Device Reel size
(inches)
ZXMN6A09DN8TA 7 12 500
Tape width
(mm)
Quantity
per reel
Device marking
ZXMN
6A09D
Issue 6 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMN6A09DN8
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
@ V
@ V
Pulsed drain current
(c)
=10V; T
GS
=10V; T
GS
=10V; T
GS
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
amb
= 25°C
(c)
(a)(d)
amb
amb
amb
(b)
=25°C
=70°C
=25°C
(b)
(b)
(a)
DSS
I
I
DM
I
I
SM
P
GS
D
S
D
Linear derating factor 10 mW/°C
Power dissipation at T
amb
= 25°C
(b)(e)
P
D
Linear derating factor 14 mW/°C
Power dissipation at T
amb
= 25°C
(b)(d)
P
D
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j
, T
stg
60 V
±20 V
5.6 A
4.5
4.3
27 A
3.5 A
27 A
1.25 W
1.8 W
2.1 W
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(a)(d)
(a)(e)
(b)(d)
R
R
R
JA
JA
JA
100 °C/W
70 °C/W
60 °C/W
Issue 6 - January 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Characteristics
ZXMN6A09DN8
Issue 6 - January 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
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