Diodes ZXMN6A08K User Manual
A
f
D
(
)
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Product Summary
I
V
R
(BR)DSS
60V
DS(on)
80mΩ @ V
150mΩ @ VGS= 4.5V
GS
= 10V
T
= 25°C
A
7.90A
5.75A
D
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
) and yet maintain superior switching
DS(on)
TOP VIEW PIN OUT -TOP VIEW
GS
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Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: TO-252
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
D
G
D
S
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A08KTC See Below 13 16 2,500
Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN6A08K
Document Revision: 2
ZXMN
6A08
YYWW
1 of 8
www.diodes.com
ZXMN = Product Type Marking Code, Line 1
6A08 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week
01-52
July 2009
© Diodes Incorporated
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f
θ
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ZXMN6A08K
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
= 10V
GS
(Note 3)
TA=70°C (Note 3)
V
DSS
V
GS
I
D
60 V
±20
V
7.90
6.30
A
(Note 2) 5.36
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)
(Note 4)
IDM
I
S
I
SM
24.3 A
9.0 A
24.3 A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
P
D
(Note 5)
(Note 2)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 6)
Operating and storage temperature range
Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 3) 14.0
(Note 5) 59.1
R
JA
θ
R
JL
T
, T
J
STG
4.13
33.0
8.94
71.5
2.12
16.9
30.3
2.77
-55 to 150
W
mW/°C
°C/W
°C
ZXMN6A08K
Document Revision: 2
2 of 8
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July 2009
© Diodes Incorporated
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Thermal Characteristics
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ZXMN6A08K
R
DS(on)
10
Limit
100m
Drain Current (A)
D
I
10m
1
DC
1s
100ms
T
=25°C
amb
25mm x 25mm
1oz FR4
110
10ms
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resi stance (°C/W)
T
=25°C
amb
25mm x 25mm
1oz FR4
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
Puls e Width (s)
Transient Thermal Impedance
R
DS(on)
10
Limit
100m
Drain Current (A )
D
I
10m
1
DC
1s
100ms
T
=25°C
amb
50mm x 50mm
2oz FR4
110
10ms
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
35
30
25
20
15
10
5
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Re sistance (°C/W)
T
=25°C
amb
50mm x 50mm
2oz FR4
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
Puls e Width (s)
Transient Thermal Imp ed an c e
Single Pulse
T
=25°C
100
10
25mm x 25mm
1oz FR4
1
100µ 1m 10m 100m 1 10 100 1k
Max Powe r Di ssipation (W)
Puls e Width (s )
amb
50mm x 50mm
2oz FR4
Pulse Power Dissipation
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 160
Max Powe r Di ssipation (W)
Temperature (°C)
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Derating Curve
ZXMN6A08K
Document Revision: 2
3 of 8
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July 2009
© Diodes Incorporated
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