Diodes ZXMN6A08E6Q User Manual

Product Summary

V

R

(BR)DSS

60V

DS(ON)

80mΩ @ V

150mΩ @ VGS=4.5V

GS

=10V

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

ADVANCE INFORMATION

 DC-DC Converters

 Power Management Functions

 Disconnect Switches

 Motor Control

SOT26

Top View

I

D

= +25°C

A

3.5A

2.5A

D

D

G

Features and Benefits

 Low On-Resistance

 Fast Switching Speed

 Low Gate Drive

 Low Threshold

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

 Weight: 0.018 grams (approximate)

Top view

Pin Out - Top View

ZXMN6A08E6Q

60V N-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

D

D

G

S

Equivalent Circuit

e3

D

S

Ordering Information (Note 4 & 5)

Part Number Compliance Case Quantity per reel

ZXMN6A08E6QTA Automotive SOT26 3,000

Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMN6A08E6Q

Document Number DS36690 Rev. 2 - 2

6A8

www.diodes.com

6A8 = Product Type Marking Code

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December 2013

© Diodes Incorporated

ZXMN6A08E6Q

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V

GS

= 10V

(Note 7)

TA = +70°C (Note 7)

V

DSS

V

GS

I

D

60 V

20

3.5

2.8

(Note 6) 2.8

Pulsed Drain Current

V

GS

= 10V

Continuous Source Current (Body diode) (Note 7)

Pulsed Source Current (Body diode) (Note 8)

(Note 8)

IDM

I

S

I

SM

16 A

2.6 A

16 A

Thermal Characteristics (@T

ADVANCE INFORMATION

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  10 sec.

8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

Characteristic Symbol Value Unit

= +25°C, unless otherwise specified.)

A

(Note 6)

P

D

(Note 7)

(Note 6)

(Note 7) 73

R

θJA

T

, T

J

STG

1.1

8.8

1.7

13.6

113

-55 to +150 °C

V

A

W

mW/°C

°C/W

ZXMN6A08E6Q

Document Number DS36690 Rev. 2 - 2

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Thermal Characteristics

10

1

100m

Drain Current (A)

D

I

10m

100m 1 10

ADVANCE INFORMATION

120

100

80

60

R

DS(on)

Limited

DC

1s

100ms

10ms

Single Pulse

T

=25°C

amb

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

D=0.5

ZXMN6A08E6Q

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

25mm x 25mm

1oz FR4

Temperature (°C)

Derating Curve

100

10

Single Pulse

T

=25°C

amb

40

D=0.2

20

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Transient Thermal Impedance

D=0.1

Single Pulse

D=0.05

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

ZXMN6A08E6Q

Document Number DS36690 Rev. 2 - 2

3 of 8

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December 2013

© Diodes Incorporated