Diodes ZXMN6A07Z User Manual

ZXMN6A07Z

D

Top view

S

D

G

60V SOT89 N-channel enhancement mode mosfet

Summary

V

(BR)DSS

60

R

0.250 @ V

0.350 @ V

(⍀) I

DS(on)

= 10V 2.5

GS

= 4.5V 2.1

GS

D

(A)

Description

This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• SOT89 package

D

G

S

Applications

• DC-DC converters

• Power management functions

• Relay and solenoid driving

• Motor control

Ordering information

Device Reel size

(inches)

ZXMN6A07ZTA 7 12 1,000

Tape width

(mm)

Quantity per

reel

Device marking

7N6

Issue 8 - January 2007 1 www.zetex.com

ZXMN6A07Z

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

@ V

Pulsed drain current

(c)

= 10V; T

GS

= 10V; T

GS

= 10V; T

GS

Continuous source current (body diode)

(a)

(c)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

amb

(b)

=25°C

=70°C

=25°C

(b)

(a)

DSS

I

DM

I

SM

P

GS

D

S

D

Linear derating factor 12 mW/°C

Power dissipation at T

amb

=25°C

(b)

P

D

Linear derating factor 21 mW/°C

60 V

± 20 V

2.5 A

2.0

1.9

6.8 A

3.3 A

6.8 A

1.5 W

2.6 W

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient R

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction

temperature.

⍜JA

83.3 °C/W

47.4 °C/W

Issue 8 - January 2007 2 www.zetex.com

Thermal characteristics

ZXMN6A07Z

Issue 8 - January 2007 3 www.zetex.com