Product Summary
Max I
V
Max R
(BR)DSS
60V
DS(on)
250mΩ @ V
350mΩ @ VGS= 4.5V
GS
= 10V
T
= 25°C
A
(Note 7)
1.4A
1.2A
D
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
• DC - DC converters
• Power management functions
• Relay and solenoid driving
• Motor control
SOT23
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A Product Line o
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60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate charge
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound,
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.008 grams (approximate)
S
G
G
Top View
Pin Out
S
Equivalent Circuit
ZXMN6A07F
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN6A07FTA
ZXMN6A07FQTA
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
AEC-Q101 7N6 7 8 3000
Automotive 7N6 7 8 3000
MarkingInformation
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
7N6
YM
www.diodes.com
7N6 = Product Type Marking Code
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ZXMN6A07F
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
T
= +25°C (Note 7)
Continuous Drain Current
V
= 10V
GS
A
= +70°C (Note 7)
T
A
T
= +25°C (Note 6)
A
Pulsed Drain Current (Note 8)
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
60 V
±20 V
1.4
1.1
A
1.2
6.9 A
1 A
6.9 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 7) 155
Thermal Resistance, Junction to Ambient (Note 9)
Operating and Storage Temperature Range
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperate
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
R
T
J, TSTG
P
D
P
D
θJA
θJL
625
5
806
6.4
200
194
-55 to +150 °C
mW
mW/°C
mW
mW/°C
°C/W
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
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Thermal Characteristics
A Product Line o
DiodesIncorporated
ZXMN6A07F
10
R
DS(on)
Limited
1
DC
100m
10m
Drain Current (A)
D
I
Single Pulse
T
1s
100ms
10ms
1ms
=25°C
amb
1 10 100
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
200
T
=25°C
amb
150
D=0.5
100
D=0.2
50
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pul se
D=0.05
D=0.1
Transient Thermal Impedance
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pul se
T
=25°C
amb
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
3 of 8
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October 2012
© Diodes Incorporated