Diodes ZXMN4A06GQ User Manual
Product Summary
I
V
R
(BR)DSS
40V 0.05 @ VGS = 10V 7A
DS(ON)
D
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
• DC-DC Converters
• Audio Output Stages
• Relay and Solenoid driving
• Motor Control
Green
ZXMN4A06GQ
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Fast Switching Speed
• Low Threshold
• Low Gate Drive
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Available
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
e3
ADVANCED INFORMATION
SOT223
Top View
Pin Out - Top View
D
G
S
Equivalent Circuit
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
ZXMN4A06GQTA Automotive SOT223 1,000/Tape & Reel
ZXMN4A06GQTC Automotive SOT223 4,000/Tape & Reel
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
YWW
N4A06
www.diodes.com
= Manufacturer’s Marking
N4A06 = Marking Code
YWW = Date Code Marking
Y = Year (ex: 3 = 2013)
WW = Week (01 - 53)
1 of 6
January 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
(Note 7)
TA = +70°C (Note 7)
V
DSS
V
GS
I
D
40 V
±20
7
5.6
(Note 6) 5
Pulsed Drain Current
V
GS
= 10V
Continuous Source Current (Body diode) (Note 7)
Pulsed Source Current (Body diode) (Note 8)
(Note 8)
IDM
I
S
I
SM
22 A
5.4 A
22 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
P
D
(Note 7)
(Note 6)
(Note 7) 32.2
R
JA
T
, T
J
STG
2
16
3.9
31
62.5
-55 to +150 °C
ADVANCED INFORMATION
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
40
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
1 µA
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 11)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 11)
Reverse recovery charge (Note 11)
V
R
DS(ON)
V
GS(th)
g
fs
SD
t
rr
Q
⎯
⎯
rr
1
⎯ ⎯
⎯ ⎯
8.7
⎯
0.8 0.95 V
14.5
7.8
0.05
0.075
⎯
⎯
⎯
V
S
ns
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes: 6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For a device surface mounted on FR-4 PCB measured at t
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature.
9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
⎯
r
t
D(off)
t
f
ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
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⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
≦5 secs.
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www.diodes.com
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19
2.3
4.1
3.4
2.8
20
7.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ZXMN4A06GQ
mW/°C
°C/W
ID = 250µA, VGS = 0V
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
ID = 250A, VDS = VGS
V
= 10V, ID = 4.5A
GS
V
= 4.5V, ID = 3.2A
GS
V
= 15V, ID = 2.5A
DS
IS = 2.5A, V
= 2.5A, di/dt = 100A/µs,
I
F
= +25°C
T
J
V
= 40V, V
DS
f = 1MHz
= 30V, V
V
DS
= 2.5A (refer to test circuit)
I
D
= 30V, V
V
DD
= 2.5A, RG ≅ 6
I
D
(refer to test circuit)
= 0V, TJ = +25°C
GS
= 0V
GS
= 10V,
GS
= 10V
GS
© Diodes Incorporated
V
A
W
January 2014
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