Diodes ZXMN4A06G User Manual

Product Summary

V

R

(BR)DSS

40V

0.05 @ V

DS(ON)

GS

= 10V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Audio Output Stages

 Relay and Solenoid driving

 Motor Control

ADVANCED INFORMATION

SOT223

Top View

I

D

7A

Green

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Fast Switching Speed

 Low Threshold

 Low Gate Drive

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.112 grams (approximate)

Pin Out - Top View

G

Equivalent Circuit

ZXMN4A06G

e3

D

S

Ordering Information (Note 4)

Part Number Compliance Case Packaging

ZXMN4A06GTA Standard SOT223 1,000/Tape & Reel

Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMN4A06G

Document number: DS33545 Rev. 3 - 2

ZXMN

4A06

www.diodes.com

ZXMN = Product Type Marking Code, Line 1
4A06 = Product Type Marking Code, Line 2

1 of 7

January 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

V

GS

= 10V

(Note 6)
TA = +70°C (Note 6)

V

DSS

V

GS

I

D

20

5.6

(Note 5) 5

Pulsed Drain Current

V

GS

= 10V
Continuous Source Current (Body diode) (Note 6)
Pulsed Source Current (Body diode) (Note 7)

(Note 7)

IDM

I

S

I

SM

5.4 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.

ADVANCED INFORMATION

6. For a device surface mounted on FR-4 PCB measured at t

7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature.

(Note 5)

P

(Note 6)

D

(Note 7)
(Note 6) 32.2

≦ 5 secs.

R

JA

T

, T

J

STG

3.9

62.5

-55 to +150 °C

Thermal Characteristics

ZXMN4A06G

40 V

V

7

A

22 A

22 A

2

16

31

W

mW/°C

°C/W

ZXMN4A06G

Document number: DS33545 Rev. 3 - 2

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www.diodes.com

January 2014

© Diodes Incorporated

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Notes 11)

Diode Forward Voltage (Note 9)

Reverse recovery time (Note 11)

Reverse recovery charge (Note 11)

V

R

DS(ON)

V

GS(th)

g

fs

SD

t

rr

Q







rr

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge (Note 11)

Gate-Source Charge (Note 11)

ADVANCED INFORMATION

Gate-Drain Charge (Note 11)

Turn-On Delay Time (Note 11)

Turn-On Rise Time (Note 11)

Turn-Off Delay Time (Note 11)

Turn-Off Fall Time (Note 11)

Notes: 9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.

10. Switching characteristics are independent of operating junction temperatures.

11. For design aid only, not subject to production testing.

C

iss

C



oss

C



rss

Q

g

Q



gs

Q



gd

t

D(on)

t



r

t



D(off)

t

f

40

 

 

 

1



 

8.7



0.8 0.95 V

19.86

16.36



770

92

61



18.2

2.1

4.5



2.55

4.45

28.61



7.35

V

1 µA

100

nA

2 V

0.05

0.075





























S

ns

nC

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

ZXMN4A06G

ID = 250µA, VGS = 0V

VDS = 40V, VGS = 0V

VGS = 20V, VDS = 0V

ID = 250A, VDS = VGS

V

= 10V, ID = 4.5A

GS

V

= 4.5V, ID = 3.2A

GS

V

= 15V, ID = 2.5A

DS

IS = 2.5A, V

= 2.5A, di/dt = 100A/µs,

I

F

= +25°C

T

J

V

= 40V, V

DS

f = 1MHz

V

= 30V, V

DS

= 2.5A (refer to test circuit)

I

D

= 30V, V

V

DD

= 2.5A, RG  6

I

D

(refer to test circuit)

= 0V, TJ = +25°C

GS

= 0V

GS

= 10V,

GS

= 10V

GS

ZXMN4A06G

Document number: DS33545 Rev. 3 - 2

3 of 7

www.diodes.com

January 2014

© Diodes Incorporated