Diodes ZXMN3G32DN8 User Manual
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30 0.028 @ V
R
DS(on)
0.045 @ V
(Ω) I
= 10V 7.1
GS
= 4.5V 5.6
GS
D
(A)
Description
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.
Features
• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet
Applications
• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting
G1
D1
S1
G1
D2
G2
S2
D1 S1
D1
Ordering information
DEVICE Reel size
(inches)
ZXMN3G32DN8TA 7 12 500
Tape width
(mm)
Quantity
per reel
S2
G2
D2
D2
Device marking
ZXMN
3G32D
Issue 1 - January 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXMN3G32DN8
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain source voltage V
Gate source voltage V
Continous Drain Current @ V
=10; TA=25°C
GS
@ VGS=10; TA=70°C
@ VGS=10; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)(d)
(b)
(b)
(a)
(b)
Linear derating factor
Power dissipation at T
=25°C
A
(a)(e)
Linear derating factor
Power dissipation at T
=25°C
A
(b)(d)
Linear derating factor
Operating and storage temperature range T
I
I
j
P
P
P
, T
DSS
GS
I
D
DM
I
S
SM
D
D
D
stg
30 V
±20 V
7.1
5.7
5.5
33.6 A
3.1 A
33.6 A
1.25
10
1.8
14
2.1
17
-55 to 150
W
mW/°C
W
mW/°C
W
mW/°C
°C
A
A
A
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
(a)(d)
(a)(e)
(b)(d)
(f)
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JL
100 °C/W
70 °C/W
60 °C/W
51 °C/W
Issue 1 - January 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
ZXMN3G32DN8
Issue 1 - January 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
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