Diodes ZXMN3F30FH User Manual
ZXMN3F30FH
D
S
G
30V SOT23 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30 0.047 @ V
R
DS(on)
0.065 @ V
(Ω) I
= 10V 4.6
GS
= 4.5V 4.0
GS
D
(A)
Description
This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
•SOT23
Applications
• DC-DC Converters
• Power management functions
• Motor Control
Ordering information
DEVICE Reel size
(inches)
ZXMN3F30FHTA 7 8 3000
Tape width
(mm)
Quantity
per reel
S
D
Device marking
KNA
Top view
Issue 2 - February 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
G
ZXMN3F30FH
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain source voltage V
Gate source voltage V
Continous Drain Current @ V
=4.5; TA=25°C
GS
@ VGS=4.5; TA=70°C
@ VGS=4.5; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
Linear derating factor
Power dissipation at T
=25°C
A
(b)
Linear derating factor
Operating and storage temperature range T
I
I
j
P
P
, T
DSS
GS
I
D
DM
I
S
SM
D
D
stg
30 V
±20 V
4.6
3.7
3.8
21 A
2.2 A
21 A
0.95
7.6
1.4
11.2
-55 to 150
W
mW/°C
W
mW/°C
°C
A
A
A
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
(a)
(b)
(d)
R
R
R
⍜JA
⍜JA
⍜JL
131 °C/W
89 °C/W
68 °C/W
Issue 2 - February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
ZXMN3F30FH
Issue 2 - February 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
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