Diodes ZXMN3B14F User Manual
ZXMN3B14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
=30V : RDS(on)=0.08 ; ID=3.5A
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3B14FTA 7” 8mm 3,000 units
ZXMN3B14FTC 13” 8mm 10,000 units
TAPE
WIDTH
QUANTITY
PER REEL
K
C
A
P
PINOUT
E
G
A
DEVICE MARKING
•
3B4
ISSUE 2 - JANUARY 2006
1
SEMICONDUCTORS
ZXMN3B14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current @ V
=4.5V;TA=25°C
GS
@VGS=4.5V;TA=70°C
@VGS=4.5V;TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C
(c)
(a)
(b)
(b)
(b)
(a)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
30 V
⫾12 V
3.5
2.9
2.9
16 A
2.4 A
16 A
1
8
mW/°C
1.5
12
mW/°C
-55 to +150 °C
125 °C/W
83 °C/W
A
A
A
W
W
SEMICONDUCTORS
ISSUE 2 - JANUARY 2006
2
TYPICAL CHARACTERISTICS
ZXMN3B14F
ISSUE 2 - JANUARY 2006
3
SEMICONDUCTORS
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