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ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
Low profile SOIC package
=30V : RDS(on)=0.025 ; ID= 8.9A
8
O
S
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3B04N8TA 7” 12mm 500 units
ZXMN3B04N8TC 13” 12mm 2500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMN
3B04
ISSUE 2 - MAY 2004
Top View
1
SEMICONDUCTORS
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ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate source voltage V
Continuous drain current @ V
=4.5V; TA=25°C
GS
@VGS=4.5V; TA=70°C
@VGS=4.5V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(b)
(a)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear derating factor
Power dissipation at T
=25°C
A
P
D
(b)
Linear derating factor
Operating and storage temperature range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
30 V
⫾12
8.9
7.3
7.2
45 A
4.5 A
45 A
2
16
mW/°C
3
24
mW/°C
-55 to +150 °C
62.5 °C/W
41.4 °C/W
V
A
A
A
W
W
SEMICONDUCTORS
ISSUE 2 - MAY 2004
2
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CHARACTERISTICS
ZXMN3B04N8
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SEMICONDUCTORS
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ZXMN3B04N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
(1)
(1) (3)
(3)
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
SWITCHING
(2) (3)
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
g
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
30 V ID=250A, VGS=0V
0.5 AVDS=30V, VGS=0V
100 nA VGS=⫾12V, VDS=0V
0.7 V ID=250A, VDS=V
0.021
0.028
0.025
0.040
VGS=4.5V, ID=7.2A
⍀
V
⍀
=2.5V, ID=5.7A
GS
24 S VDS=15V,ID=7.2A
2480 pF
318 pF
184 pF
9ns
11.5 ns
40 ns
16.6 ns
23.1 nC
4.9 nC
6.2 nC
=15V, VGS=0V,
V
DS
f=1MHz
=15V, VGS=4.5V
V
DD
I
=1A
D
R
≅6.0⍀,
G
=15V,VGS=4.5V,
V
DS
I
=7.2A
D
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(1)
(3)
(3)
V
SD
t
rr
Q
rr
0.85 0.95 V TJ=25°C, IS=8A,
V
=0V
GS
17.9 ns TJ=25°C, IF=3.2A,
10 nC
di/dt= 100A/s
GS
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SEMICONDUCTORS
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ISSUE 2 - MAY 2004
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TYPICAL CHARACTERISTICS
ZXMN3B04N8
ISSUE 2 - MAY 2004
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SEMICONDUCTORS
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ZXMN3B04N8
TYPICAL CHARACTERISTICS
SEMICONDUCTORS
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PACKAGE OUTLINE
ZXMN3B04N8
⍜
L
C
PIN 1
D
H
E
A
SEATING P LANE
B
E
A1
Controlling dimensions are in inches. Approximate conversions are given in millimeters
PACKAGE DIMENSIONS
DIM
Inches Millimeters
Min Max Min Max Min Max Min Max
DIM
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 ⍜ 0⬚ 8⬚ 0⬚ 8⬚
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27
Inches Millimeters
© Zetex Semiconductors plc 2004
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissued to provide outlineinformationonlywhich (unless agreed bytheCompanyin writing) may notbeused,applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 2 - MAY 2004
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SEMICONDUCTORS
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