Diodes ZXMN3B04N8 User Manual
ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
Low profile SOIC package
=30V : RDS(on)=0.025 ; ID= 8.9A
8
O
S
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3B04N8TA 7” 12mm 500 units
ZXMN3B04N8TC 13” 12mm 2500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMN
3B04
ISSUE 2 - MAY 2004
Top View
1
SEMICONDUCTORS
ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate source voltage V
Continuous drain current @ V
=4.5V; TA=25°C
GS
@VGS=4.5V; TA=70°C
@VGS=4.5V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(b)
(a)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear derating factor
Power dissipation at T
=25°C
A
P
D
(b)
Linear derating factor
Operating and storage temperature range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
30 V
⫾12
8.9
7.3
7.2
45 A
4.5 A
45 A
2
16
mW/°C
3
24
mW/°C
-55 to +150 °C
62.5 °C/W
41.4 °C/W
V
A
A
A
W
W
SEMICONDUCTORS
ISSUE 2 - MAY 2004
2
CHARACTERISTICS
ZXMN3B04N8
ISSUE 2 - MAY 2004
3
SEMICONDUCTORS
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