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ZXMN3B01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
(BR)DSS
=30V : R
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
=0.15 ; ID=2A
DS(on)
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC-DC Converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3B01FTA 7” 8mm 3000 units
ZXMN3B01FTC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
3
2
T
O
S
PINOUT
DEVICE MARKING
•
3B1
ISSUE 1 - DECEMBER 2005
TOP VIEW
1
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ZXMN3B01F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
=4.5V; TA=25°C
@V
GS
@VGS=4.5V; TA=70°C
@VGS=4.5V; TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
30 V
⫾12 V
2.0
1.6
1.7
9.4 A
1.3 A
9.4 A
625
5
806
6.4
mW
mW/°C
mW
mW/°C
-55 to +150 °C
200 °C/W
155 °C/W
A
A
A
SEMICONDUCTORS
ISSUE 1 - DECEMBER 2005
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Page 3
TYPICAL CHARACTERISTICS
ZXMN3B01F
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3
SEMICONDUCTORS
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ZXMN3B01F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
(1)
(1) (3)
(3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING
(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
g
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
30 V ID=250A, VGS=0V
1 AVDS=30V, VGS=0V
100 nA VGS=⫾12V, VDS=0V
0.7 V ID=250A, VDS=V
0.150
0.240⍀⍀
4SV
VGS=4.5V, ID=1.7A
=2.5V, ID=1.2A
V
GS
=15V,ID=1.7A
DS
258 pF
V
=15V,VGS=0V,
50 pF
30 pF
DS
f=1MHz
2.69 ns
3.98 ns
8ns
5.27 ns
VDD= 15V, VGS=4.5V
ID=1A
R
≅ 6.0⍀
G
2.93 nC
V
=15V,VGS=4.5V,
0.57 nC
0.92 nC
DS
I
D
=1.7A
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(1)
(3)
(3)
V
SD
t
rr
Q
rr
0.85 0.95 V TJ=25°C, IS=1.7A,
=0V
V
GS
10.85 ns TJ=25°C, IF=1.3A,
5NC
di/dt= 100A/s
GS
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SEMICONDUCTORS
4
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CHARACTERISTICS
ZXMN3B01F
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SEMICONDUCTORS
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ZXMN3B01F
Q
Q
GS
V
G
Q
TYPICAL CHARACTERISTICS
Current
G
12V
GD
regulator
50k
I
G
V
GS
Same as
D.U.T
D.U.T
V
DS
I
D
Basic gate charge waveform
V
DS
90%
10%
V
GS
t
d(on)tr
t
(on)
Switching time waveforms
SEMICONDUCTORS
Charge
t
d(off)
Gate charge test circuit
R
D
V
GS
R
G
t
r
t
(on)
V
DS
V
CC
Switching time test circuit
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ZXMN3B01F
PACKAGE OUTLINE PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ⍜ 10⬚ TYP 10⬚ TYP
MILLIMETERS INCHES
DIM
© Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publicationis issued toprovide outline informationonly which (unless agreed by the Company inwriting) may notbe used, appliedor reproduced
for any purposeor form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 1 - DECEMBER 2005
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SEMICONDUCTORS
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