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Product Summary
I
max
D
V
(BR)DSS
30V
R
120mΩ @ V
180mΩ @ VGS = 4.5V
DS(on)
max
= 10V
GS
TA = 25°C
(Notes 4 & 7)
3.7A
3.0A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
• DC-DC Converters
• Power management functions
• Disconnect switches
• Portable applications
Top View
DFN3020B-8
D2 D2 D1 D1
D2
G2 S2 G1 S1
Bottom View
Product Line o
Diodes Incorporated
ZXMN3AMC
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low profile package, for thin applications
• Low R
• 6mm
• Low on-resistance
• Fast switching speed
• “Lead-Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
, thermally efficient package
θJA
2
footprint, 50% smaller than TSOP6 and SOT23-6
Mechanical Data
• Case: DFN3020B-8
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
D2
S2
D1
Bottom View
Pin-Out
Pin 1
G1
D1
G2
S1
Equivalent Circuit
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN3AMCTA DNB 7 8 3000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DNB
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
DNB = Product Type Marking Code
Top View, Dot Denotes Pin 1
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ZXMN3AMC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
(Notes 4 & 7)
Continuous Drain Current
V
GS
= 10V
TA = 70°C (Notes 4 & 7)
(Notes 3 & 7) 2.9
Pulsed Drain Current
V
GS
= 10V
(Notes 6 & 7)
Continuous Source Current (Body diode) (Notes 4 & 7)
Pulse Source Current (Body diode) (Notes 6 & 7)
V
V
DSS
GSS
I
I
DM
I
I
SM
D
S
30
±20
3.7
3.0
13
3.2
13
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
1.50
12
2.45
19.6
1.13
9
1.70
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 3 & 7)
(Notes 4 & 7)
P
D
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 3 & 7)
(Notes 4 & 7) 51.0
(Notes 5 & 7) 111
R
θJA
(Notes 5 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
Operating and Storage Temperature Range
Notes: 3. For a device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
θJL
T
, T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150 °C
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
2 of 8
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December 2010
© Diodes Incorporated
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Thermal Characteristics
R
10
DS(on)
Limited
1
DC
1s
100m
Drain Current (A)
D
I
10m
8 sq cm 2oz Cu
One active die
Singl e Pulse, T
100ms
amb
110
VDS Drain-Sour ce Vo l tage (V)
Safe Operating Area
=25°C
10ms
1ms
100us
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Diodes Incorporated
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
10 sq cm 1oz Cu
Two active die
8 sq cm 2oz Cu
One active die
10 sq cm 1oz Cu
One active die
Temperature (°C)
Derating Curve
ZXMN3AMC
8 sq cm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
3.5
T
=25°C
amb
3.0
T
=150°C
j max
Continuous
2.5
2.0
2oz Cu
One active die
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
0.1 1 10 100
Board Cu Area (sqcm)
2oz Cu
Two active die
1oz Cu
One active die
1oz Cu
Two active die
Power Dissipation v Board Area
225
200
175
150
1oz Cu
One active die
1oz Cu
Two active die
125
100
75
50
25
Thermal Resistance (°C/W)
2oz Cu
One active die
0
0.1 1 10 100
2oz Cu
Two active die
Board Cu Area (sqcm)
Thermal Resistance v Board A rea
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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)
r
r
g
g
g
g
)
r
)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
V
R
DS(ON)
V
GS(th
g
fs
SD
t
r
Q
r
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
Notes: 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
t
t
C
C
C
Q
Q
Q
Q
D(on
D(off
iss
oss
rss
t
t
s
d
f
30 - - V
Diodes Incorporated
- - 0.5
- - ±100 nA
1.0 - 3.0 V
0.100 0.120
-
0.140 0.180
- 3.5 - S
- 0.85 0.95 V
- 17.7
- 13.0
-
-
- 190 -
- 38 -
- 20 -
- 2.3 -
- 3.9 -
- 0.6 -
- 0.9 -
- 1.7 -
- 2.3 -
- 6.6 -
- 2.9 -
Product Line o
ID = 250μA, VGS = 0V
μA
Ω
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
= 30V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
ID = 250μA, VDS = VGS
V
= 10V, ID = 2.5A
GS
V
= 4.5V, ID = 2.0A
GS
VDS = 10V, ID = 2.5A
IS = 1.7A, VGS = 0V
I
= 2.5A, di/dt = 100A/µs
S
= 25V, VGS = 0V,
V
DS
f = 1.0MHz
= 4.5V
V
GS
= 10V
V
GS
= 15V, I
V
DS
V
= 10V, RG = 6Ω
GS
ZXMN3AMC
V
= 15V
DS
I
= 2.5A
D
= 2.5A
D
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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December 2010
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Typical Electrical Characteristics
T = 25°C
10
1
0.1
Drain Current (A)
D
I
0.1 1 10
VDS Drain-Source Voltage (V)
10V
7V
Output Ch aracteristics
5V
4.5V
4V
3.5V
3V
V
GS
2.5V
Product Line o
Diodes Incorporated
ZXMN3AMC
T = 150°C
10
1
0.1
Drain Current (A)
D
I
0.1 1 10
VDS Drain-Source Voltage (V)
10V
7V
5V
4.5V
4V
3.5V
3V
2.5V
V
GS
2V
Outpu t C h aracteristics
10
VDS = 10V
T = 150°C
1
Drain Current (A )
D
I
0.1
2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
2.5V
1
0.1
T = 25°C
Drain-Source On-Resistance (W)
DS(on)
R
0.1 1 10
ID Drain Current (A)
3V
3.5V
4V
On-Resistance v D rain Current
4.5V
5V
1.6
VGS = 10V
1.4
GS(th)
1.2
ID = 2.5A
R
DS(on)
and V
1.0
DS(on)
0.8
0.6
0.4
Normalised R
-50 0 50 100 150
VGS = V
DS
ID = 250uA
V
GS(th)
Tj Junction Temperature (°C)
Normalised Curves v Tem perature
V
GS
7V
10V
10
T = 150°C
1
T = 25°C
0.1
Reverse Drain Current (A)
SD
I
0.4 0.6 0.8 1.0 1.2
Source-Drain Voltage (V)
V
SD
Source-Drain Diode Forward Voltage
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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Typical Electrical Characteristics - Continued
300
C
OSS
VGS = 0V
f = 1MHz
C
RSS
250
200
C
150
ISS
100
50
C Capacitance (p F )
0
0.1 1 10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Product Line o
Diodes Incorporated
10
ID = 2.5A
8
6
4
VDS = 15V
2
Gate-Source Voltage (V)
GS
0
V
01234
Q - Charge (n C)
Gate-Source Voltage v G ate Charge
ZXMN3AMC
Test Circuits
Q
G
V
90%
10%
V
V
DS
GS
Q
G
GS
Q
GD
Charge
Basicgatechargewaveform
t
d(on)tr
t
(on)
t
d(off)
t
r
t
(on)
Current
regulator
12V
50k
I
G
Same as
D.U. T
D.U. T
V
GS
Gate charge test circuit
R
D
V
GS
R
G
V
DS
I
D
V
DS
V
DD
Switching time waveforms
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
6 of 8
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Switching time test circuit
December 2010
© Diodes Incorporated
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Package Outline Dimensions
A
A1
D4
E
L
D2
b
Z
Suggested Pad Layout
G
C
G1
Y2
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Diodes Incorporated
ZXMN3AMC
A3
D
D4
E2
e
X
Y1
Y
X1
Dimensions Value (in mm)
C 0.650
G 0.285
G1 0.090
X 0.400
X1 1.120
Y 0.730
Y1 0.500
Y2 0.365
DFN3020B-8
Dim Min Max Typ
A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 - - 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e - - 0.65
E 1.95 2.075 2.00
E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z - - 0.375
All Dimensions in mm
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
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ZXMN3AMC
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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© Diodes Incorporated
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