Diodes ZXMN3A14F User Manual

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f

D

Product Summary

Max I

D

BV

Max R

DSS

30V

65mΩ @ V

95mΩ @ VGS = 4.5V

DS(on)

= 10V

GS

T

= 25°C

A

(Note 4)

3.2A

2.6A

Description and Applications

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

• DC - DC converters

• Power management functions

• Disconnect switches

• Motor control

SOT23

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ZXMN3A14F

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• Low gate charge

• Low threshold

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

S

G

Top View

Pin Out

Equivalent Circuit

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN3A14FTA

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

3. For more packaging details, go to our website at http://www.diodes.com.

314 7 8 3000 Units

Marking Information

ZXMN3A14F

Document Number DS33536 Rev. 2 - 2

314

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314 = Product Type Marking Code

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

V

GS

= 10V

TA = 70°C (Note 5)

Pulsed Drain Current (Note 6) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 6)

(Note 5) (Note 4)

V

DSS

V

GS

ID

I

DM

I

S

I

SM

30 V

±20 V

3.9

3.2

3.2 18 A

2.3 A 18 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 4) Linear Derating Factor Power Dissipation (Note 5) Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 7) Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.

6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

R R R

T

J, TSTG

P

D

P

D

θJA θJA θJL

1 8

1.5 12

125 °C/W

83 °C/W

70.44 °C/W

-55 to +150 °C

A

W

mW/°C

W

mW/°C

ZXMN3A14F

Document Number DS33536 Rev. 2 - 2

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Thermal Characteristics

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ZXMN3A14F

R

10

DS(on)

Limited

1

DC

amb

=25°C

1s

100ms

10ms

1ms

100µs

100m

Single Pulse

Drain Current (A)

10m

D

I

T

100m 1 10

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

100

D=0.5

50

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

1.0

0.8

0.6

0.4

0.2

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Dera ting Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

T

=25°C

amb

Transient Thermal Impedance

ZXMN3A14F

Document Number DS33536 Rev. 2 - 2

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Puls e Powe r Dissipat ion

April 2012