Diodes ZXMN3A06DN8 User Manual
ZXMN3A06DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
(BR)DSS
= 30V; R
= 0.035 ;ID= 6.2A
DS(ON)
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL TAPE
ZXMN3A06DN8TA 7
ZXMN3A06DN8TC 13’‘ 12mm
WIDTH
’‘ 12mm 500 units
DEVICE MARKING
ZXMN
3A06D
QUANTITY
PER REEL
2500 units
SO8
PINOUT
ISSUE 2 - OCTOBER 2002
Top view
1
ZXMN3A06DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(b)(d)
GS
(V
=10V; TA=70°C)(b)(d)
GS
(V
=10V; TA=25°C)(a)(d)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
DSS
GS
I
D
DM
S
SM
P
D
P
D
P
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
θJA
θJA
θJA
30 V
⫾20 V
6.2
5.0
4.9
30 A
3.7 A
30 A
1.25
10
mW/°C
1.80
14.5
mW/°C
2.1
17.3
mW/°C
-55 to +150 °C
100 °C/W
69 °C/W
58 °C/W
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
ISSUE 2 - OCTOBER 2002
2
TYPICAL CHARACTERISTICS
ZXMN3A06DN8
ISSUE 2 - OCTOBER 2002
3
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