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ZXMN3A06DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
(BR)DSS
= 30V; R
= 0.035 ;ID= 6.2A
DS(ON)
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL TAPE
ZXMN3A06DN8TA 7
ZXMN3A06DN8TC 13’‘ 12mm
WIDTH
’‘ 12mm 500 units
DEVICE MARKING
ZXMN
3A06D
QUANTITY
PER REEL
2500 units
SO8
PINOUT
ISSUE 2 - OCTOBER 2002
Top view
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ZXMN3A06DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(b)(d)
GS
(V
=10V; TA=70°C)(b)(d)
GS
(V
=10V; TA=25°C)(a)(d)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
DSS
GS
I
D
DM
S
SM
P
D
P
D
P
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
θJA
θJA
θJA
30 V
⫾20 V
6.2
5.0
4.9
30 A
3.7 A
30 A
1.25
10
mW/°C
1.80
14.5
mW/°C
2.1
17.3
mW/°C
-55 to +150 °C
100 °C/W
69 °C/W
58 °C/W
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
ISSUE 2 - OCTOBER 2002
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TYPICAL CHARACTERISTICS
ZXMN3A06DN8
ISSUE 2 - OCTOBER 2002
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ZXMN3A06DN8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3) g
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
fs
30 V
I
=250µA, VGS=0V
D
0.5 AVDS=30V, VGS=0V
100 nA
1VI
0.035
0.050
V
GS
=250A, VDS=V
D
VGS=10V, ID=9A
⍀
V
⍀
=4.5V, ID=7.4A
GS
=±20V, VDS=0V
13.5 S VDS=15V,ID=9A
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
oss
rss
796 pF
137 pF
83.5 pF
V
=25V,VGS=0V,
DS
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
d(on)
r
d(off)
f
g
g
gs
gd
3.0 ns
6.4 ns
21.6 ns
=15V, ID=3.5A
V
DD
R
=6.0⍀,VGS=10V
G
9.4 ns
9.2 nC VDS=15V,VGS=5V,
I
=3.5A
D
17.5 nC
V
=15V,VGS=10V,
2.3 nC
3.1 nC
DS
I
=3.5A
D
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SD
rr
rr
0.85 0.95 V TJ=25°C, IS=5.1A,
V
=0V
GS
17.8 ns TJ=25°C, IF=3.5A,
11.6 nC
di/dt= 100A/µs
GS
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TYPICAL CHARACTERISTICS
ZXMN3A06DN8
10V
4V
3V
2.5V
1.5V
2V
V
GS
Drain Current (A)
I
D
0.01
T = 25° C
10
1
0.1
0.1 1 10
VDSDrai n-Source Voltage (V)
Output Characteristics
10
T = 150° C
1
Drain Current (A)
D
I
0.1
1234
T = 25° C
VDS= 10V
VGSGate-SourceVoltage (V)
Typical Transfer Characteristics
10V
T = 150° C
4V
10
1
0.1
Drain Current (A)
D
I
0.01
0.1 1 10
VDSDrai n-Source Voltage (V)
Output Characteristics
1.6
1.4
GS(th)
1.2
and V
1.0
DS(on)
0.8
0.6
NormalisedR
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
VGS= 10V
=1.5A
I
D
VGS=V
DS
ID= 250uA
Normalised Curves v Temperature
3.5V
R
V
3V
2.5V
2V
1.5V
V
1V
DS(on )
GS(t h)
GS
100
10
2V
1
0.1
Drai n-Source On- Resist ance (Ω)
0.01
0.1 1 10
DS(on)
R
IDDrain Current (A)
On-Resistance vDrain Current
ISSUE 2 - OCTOBER 2002
100
T = 25° C
V
GS
2.5V
3V
10
1
4V
10V
Reverse Drain Current (A)
SD
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
T = 150° C
T = 25° C
V
Source-Drai n Vol tage (V)
SD
Source-Drain Diode Forward Vol tage
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ZXMN3A06DN8
TYPICAL CHARACTERISTICS
1200
1000
800
600
400
200
C Capacitance (pF)
0
0.1 1 10
C
ISS
VGS=0V
f=1MHz
C
OSS
C
VDS-Drain-SourceVoltage(V)
Capacitance v Drain-Source Voltage
10
ID=3.5A
8
6
RSS
4
2
Gate-Source Voltage (V)
0
GS
0 5 10 15 20
V
Q - Charge (nC)
VDS= 15V
Gate-SourceVoltagevGateCharge
BasicGateChargeWaveform
Switching Time Waveforms
Gate Charge Test Circuit
Switching Time Test Circuit
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ZXMN3A06DN8
PACKAGE DIMENSIONSPACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
DIM
INCHES MILLIMETRES
MIN MAX MIN MAX
A 0.053 0.069 1.35 1.75
A1 0.004 0.010 0.10 0.25
D 0.189 0.197 4.80 5.00
H 0.228 0.244 5.80 6.20
E 0.150 0.157 3.80 4.00
L 0.016 0.050 0.40 1.27
e 0.050 BSC 1.27 BSC
b 0.013 0.020 0.33 0.51
c 0.008 0.010 0.19 0.25
⍜ 0⬚ 8⬚ 0⬚ 8⬚
h 0.010 0.020 0.25 0.50
© Zetex plc 2002
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
These offices are supported by agents and distributors in major countries world-wide.
This publicationis issued toprovide outline informationonly which (unlessagreed by theCompany in writing)may not beused, applied orreproduced
for any purposeor form partof any orderor contract orbe regarded asa representation relatingto the productsor services concerned.The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
www.zetex.com
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
ISSUE 2 - OCTOBER 2002
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