Diodes ZXMN3A04K User Manual
ZXMN3A04K
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
SUMMARY
V
(BR)DSS
=30V : R
DESCRIPTION
This new generation of Trench MOSFETs from Zetex
utilizesauniquestructurethatcombinesthebenefitsof
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage
power management applications.
=0.02 ; ID=18.4A
DS(on)
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
DPAK (TO252) package
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
ZXMN3A04KTC
TAPE WIDTH
SIZE
13” 16mm 2500 units
QUANTITY PER
REEL
K
A
P
D
PINOUT
DEVICE MARKING
•
ZXMN
3A04K
ISSUE 1 - FEBRUARY 2004
TOP VIEW
1
SEMICONDUCTORS
ZXMN3A04K
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
=10V; TA=25°C
GS
@VGS=10V; TA=70°C
@VGS=10V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
Linear derating factor
(b)
Power dissipation at T
=25°C
A
Linear derating factor
(d)
Power dissipation at T
=25°C
A
Linear derating factor
Operating and storage temperature range T
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
j,Tstg
30 V
±20 V
18.4
14.7
12.0
66 A
11.5 A
66 A
4.3
34.4
mW/°C
10.1
80.8
mW/°C
2.15
17.2
mW/°C
-55 to +150 °C
A
A
A
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature.
(d)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
(b)
(d)
R
R
R
⍜JA
⍜JA
⍜JA
29 °C/W
12.3 °C/W
58 °C/W
ISSUE 1 - FEBRUARY 2004
SEMICONDUCTORS
2
TYPICAL CHARACTERISTICS
ZXMN3A04K
ISSUE 1 - FEBRUARY 2004
3
SEMICONDUCTORS
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