Diodes ZXMN3A03E6 User Manual
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A03E6
SUMMARY
V
(BR)DSS
= 30V; R
= 0.050 ID= 4.6A
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
• SOT23-6 package
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
-
6
3
2
T
O
S
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3A03 E6 TA 7” 8mm 3000 units
ZXMN3A03 E6 TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
3A3
ISSUE 3 - OCTOBER 2005
PINOUT
Top View
1
SEMICONDUCTORS
ZXMN3A03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate source voltage V
Continuous drain current V
=10V; TA=25°C
GS
VGS=10V; TA=70°C
VGS=10V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
A
=25°C
A
(c)
(a)
(b)
(b)
(b)
(a)
(b)
Operating and storage temperature range T
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
(a)
(b)
R
θJA
R
θJA
30 V
20 V
4.6
3.7
3.7
17 A
2.6 A
17 A
1.1
8.8
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
113 °C/W
73 °C/W
A
W
W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 3 - OCTOBER 2005
SEMICONDUCTORS
2
CHARACTERISTICS
ZXMN3A03E6
ISSUE 3 - OCTOBER 2005
3
SEMICONDUCTORS
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