Diodes ZXMN3A02X8 User Manual
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
Low profile SOIC package
=0.025 ID=6.7A
DS(ON)
ZXMN3A02X8
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
ZXMN3A02X8TA 7” 12mm 1000 units
ZXMN3A02X8TC 13” 12mm 4000 units
DEVICE MARKING
•
ZXMN
3A02
ISSUE 1 - JANUARY 2002
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
Top View
1
ZXMN3A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
A
A
=10V; TA=25°C (b)
GS
V
=10V; TA=70°C (b)
GS
V
=10V; TA=25°C (a)
GS
=25°C (a)
=25°C (b)
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
30 V
20 V
6.7
5.4
5.3
24 A
3.2 A
24 A
1.1
8.8
1.8
14.4
-55 to +150 °C
113 °C/W
70 °C/W
mW/°C
mW/°C
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
ISSUE 1 - JANUARY 2002
2
CHARACTERISTICS
ZXMN3A02X8
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
ISSUE 1 - JANUARY 2002
3
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