Diodes ZXMN3A01Z User Manual

f

D

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE

Product Summary

V

R

(BR)DSS

30V

Max

DS(on)

120mΩ @ V

180mΩ @ VGS = 4.5V

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• DC-DC Converters

ADVANCE INFORMATION

• Power Management functions

• Motor control

SOT89

Top View

Features and Benefits

I

max

D

= 25°C

T

A

(Note 5)

3.3A

2.7A

• Low On-Resistance

• Low Threshold

• Fast Switching Speed

• Low Gate Drive

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.052 grams (approximate)

G

S

Device symbol Pin-out Top

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ZXMN3A01Z

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN3A01ZTA 1S8 7 12 1,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXMN3A01Z

Document number DS35722 Rev. 1 - 2

1S8

1S8 = Product type Marking Code

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P, P

T

RAN

N

T P

O

R

θ

R

CUR

RENT

T

R

T T

HER

R

TANC

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Steady

State

@ V
@ V
@ V

= 10V ; T

GS

= 10V ; T

GS

= 10V ; T

GS

= 25°C (Note 5)

A

= 75°C (Note 5)

A

= 75°C (Note 4)

A

Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 4)
(Note 5) 2.12 W
(Note 4)
(Note 5) 59 °C/W

Operating and Storage Temperature Range

ADVANCE INFORMATION

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper

6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature.

1,000

100

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V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

P

D

R

θJA

, T

T

J

STG

ZXMN3A01Z

30 V

±20 V

3.3

2.7

2.2
20 A

3.3 A
20 A

0.97 W

129 °C/W

-55 to +150 °C

A

(W)

IWE

SIE

EAK

(PK)

Single Pulse
R = 57C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

100

10

1

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

°

10

R

DS(on)

Limited

P = 10sWµ

(A)

1

AIN

D

I, D

0.1

T = 150°C
T = 25°C
V = 10V
Single Pulse

DUT on 1in. Board

0.01

0.1 1 10 100

D = 0.9

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

J(max)
A
GS

2

V , DRAIN-SOURCE VOLTAGE (V)

DS

W

P = 100µs

W

Fig. 2 SOA, Safe Operation Area

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

0.00001
t1, PULSE DURATION TIMES (sec)

R (t) = r(t) * R

θθ

JA JA

R = 57°C/W

θ

JA

Duty Cycle, D = t1/ t2

Fig. 3 Transi ent Thermal Resist ance

ZXMN3A01Z

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)

g

g

g

g

r

r

)

r

)

R

CUR

RENT

R

CUR

R

T

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS

Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Note 7 & 9)

Diodes Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
Output Capacitance (Note 8 & 9)

ADVANCE INFORMATION

Reverse Transfer Capacitance (Note 8 & 9)
Gate Charge (Note 8 & 9)
Total Gate Charge (Note 8 & 9)
Gate-Source Charge (Note 8 & 9)
Gate-Drain Charge (Note 8 & 9)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time (Note 8 & 9)
Turn-On Rise Time (Note 8 & 9)
Turn-Off Delay Time (Note 8 & 9)
Turn-Off Fall Time (Note 8 & 9)

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.

8. Switching characteristics are independent of operating junction temperature.

9. For design aid only, not subject to production testing.

10

9

BV

I

V

GS(th

R

DS (ON)

g

V

C
C
C

Q

Q

t

D(on

t

D(off

DSS
DSS
GSS

FS
SD

iss

oss
rss

Q
Q

t

r

Q

t

t

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ZXMN3A01Z

30 - - V

s
d

r

f

- - 0.5

- - 100 nA

1 - - V

0.106 120

-

-

180

- 3.5 - S

- 0.85 0.95 V

- 186 - pF

- 48 - pF

- 29 - pF

- 2.6 - nC

- 5.0 - nC

- 0.8 - nC

- 1.2 - nC

17.7 ns

13.0 nC

- 2.6 - ns

- 4.1 - ns

- 13.5 - ns

- 3.6 - ns

10

9

VGS = 0V, ID = 250μA

μA

VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 2.5A

V

mΩ

GS

= 4.5V, ID = 2A

V

GS

VDS = 4.5V, ID = 2.5A
TJ = 25°C, IS = 1.7A, VGS = 0V

= 25V, VGS = 0V,

V

DS

f = 1.0MHz
VGS = 4.5V, VDS = 15V, ID = 2.5A
V

= 10V, VDS = 15V,

GS

= 2.5A

I

D

= 25°C, IS = 2.5A,

T

J

di/dt = 100A/μs

V

= 10V, VDD = 15V,

GS

= 6Ω , ID = 2.5A

R

G

8
7

(A)

6
5
4

AIN

3

D

I, D

2
1
0

012345

V , DRAIN-SOURCE VOL TAGE (V)

DS

Fig. 4 Typical Output Characteristic, T = 25°C

A

8
7

(A
EN

6
5
4

AIN

3

D

I, D

2
1
0

0123 45

V , DRAIN-SOURCE VOL TAGE (V)

DS

Fig. 5 Typical Output Characteristic

, T = 150°C

A

ZXMN3A01Z

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RAIN C

URREN

T

R

R

OUR

ON-R

R

RAIN-SOUR

CE O

N-R

TAN

C

C

UNC

TIO

C

P

C

T

C

F

GAT

THRESH

O

O

TAG

Diodes Incorporated

ZXMN3A01Z

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10

(A)

1

D

I, D

0.1

ADVANCE INFORMATION

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0123456

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 6 Typical Transfer Characteristics

10

Ω

ESISTANCE ( )

1

V = 2.5VGS V = 3.0VGS

CE

0.1

AIN-S

V = 3.5VGS

V = 4.0VGS V= 5.0V

GS

, D

DS(ON)

0.01

0.01 0.1 1 10
I , DRAIN-SOURCE CURRENT (A)

D

Fig. 7 Typical On-Resistance vs.

Drain Curr ent and Gate V oltage

V = 10VGS

1.4

Ω

E ( )

1.2

ESIS

1.0

V=

V

GS

0.8

, D

DS(ON)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

I = 250µA

D

DS

°

Fig. 8 On-Resistance Variation with Temperature

1,000

)
E (p

AN
I

A
A

N

, J

100

T

f = 1MHz

C

iss

C

oss

C

rss

10

T = 150°C

1

A

T= 25°C

A

0.1

S

I , SOURCE CURRENT (V)

0.01
0 0.2 0.4 0.6 0.8 1.0 1.4

V , SOURCE-DRAIN VOLTAG E (V)

SD

Fig. 9 Diode Forwar d Voltag e vs. Current

10

V = 15V

E (V)

DS

8

I= A

2.5

D

L

6

LD V

4

E

2

GS

V

1.2

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

ZXMN3A01Z

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0

0123456

, TOTAL GATE CHARGE

Q (nC)

g

Fig. 11 Gate Charge

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Package Outline Dimensions

E

ADVANCE INFORMATION

B1

8

°

(

4

X

Suggested Pad Layout

Y3

)

Y

B

X (3x)

D1

e1

D

e

X1

X2 (2x)

R

Y2

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ZXMN3A01Z

0

0

2

.

0

L

A

Y1

Y4

C

C

SOT89

Dim Min Max

A 1.40 1.60
B 0.44 0.62

H

B1 0.35 0.54

C 0.35 0.43
D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60
e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25
L 0.89 1.20
All Dimensions in mm

Dimensions Value (in mm)

X 0.900
X1 1.733
X2 0.416

Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125

C 1.500

ZXMN3A01Z

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

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