Diodes ZXMN3A01Z User Manual

f

D

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE

Product Summary

V

R

(BR)DSS

30V

Max

DS(on)

120mΩ @ V

180mΩ @ VGS = 4.5V

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• DC-DC Converters

ADVANCE INFORMATION

• Power Management functions

• Motor control

SOT89

Top View

Features and Benefits

I

max

D

= 25°C

T

A

(Note 5)

3.3A

2.7A

• Low On-Resistance

• Low Threshold

• Fast Switching Speed

• Low Gate Drive

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.052 grams (approximate)

G

S

Device symbol Pin-out Top

A Product Line o

Diodes Incorporated

ZXMN3A01Z

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN3A01ZTA 1S8 7 12 1,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXMN3A01Z

Document number DS35722 Rev. 1 - 2

1S8

1S8 = Product type Marking Code

1 of 6

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February 2012

© Diodes Incorporated

f

P, P

T

RAN

N

T P

O

R

θ

R

CUR

RENT

T

R

T T

HER

R

TANC

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Steady

State

@ V
@ V
@ V

= 10V ; T

GS

= 10V ; T

GS

= 10V ; T

GS

= 25°C (Note 5)

A

= 75°C (Note 5)

A

= 75°C (Note 4)

A

Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 4)
(Note 5) 2.12 W
(Note 4)
(Note 5) 59 °C/W

Operating and Storage Temperature Range

ADVANCE INFORMATION

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper

6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature.

1,000

100

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V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

P

D

R

θJA

, T

T

J

STG

ZXMN3A01Z

30 V

±20 V

3.3

2.7

2.2
20 A

3.3 A
20 A

0.97 W

129 °C/W

-55 to +150 °C

A

(W)

IWE

SIE

EAK

(PK)

Single Pulse
R = 57C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

100

10

1

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

°

10

R

DS(on)

Limited

P = 10sWµ

(A)

1

AIN

D

I, D

0.1

T = 150°C
T = 25°C
V = 10V
Single Pulse

DUT on 1in. Board

0.01

0.1 1 10 100

D = 0.9

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

J(max)
A
GS

2

V , DRAIN-SOURCE VOLTAGE (V)

DS

W

P = 100µs

W

Fig. 2 SOA, Safe Operation Area

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

0.00001
t1, PULSE DURATION TIMES (sec)

R (t) = r(t) * R

θθ

JA JA

R = 57°C/W

θ

JA

Duty Cycle, D = t1/ t2

Fig. 3 Transi ent Thermal Resist ance

ZXMN3A01Z

Document number DS35722 Rev. 1 - 2

2 of 6

www.diodes.com

February 2012

© Diodes Incorporated