Diodes ZXMN3A01F User Manual

Product Summary

V

R

(BR)DSS

30V 0.12Ω @ VGS = 10V 2.0A

DS(ON)

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power Management Functions

 Motor Control

ADVANCED INFORMATION

Top View

ZXMN3A01F

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

I

D

 Low On-Resistance

 Fast Switching Speed

 Low Threshold

 Low Gate Drive

 Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

e3

D

D

G

G

Top View

Pin Configuration

S

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

ZXMN3A01FTA SOT23 3,000/Tape & Reel
ZXMN3A01FTC SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

7N3

ZXMN3A01F

Document number: DS33528 Rev. 3 - 2

7N3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current, VGS = 10V

Pulsed Drain Current (Note 7)
Maximum Body Diode Continuous Current (Note 6)

(Note 6)
(Note 6)
(Note 5)

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

V

DSS

V

GSS

I

D

I

DM

I

S

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation
Linear Derating Factor

Total Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.

ADVANCED INFORMATION

6. For a device surface mounted on FR-4 PCB measured at t

7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.

(Note 5)

(Note 6)

(Note 5)
(Note 6) 155

≦5 secs.

P

P

R

T

J, TSTG

θJA

D

D

-55 to +150 °C

ZXMN3A01F

30 V

±20

2.0

1.6

1.8

8 A

1.3 A

625 mW

5 mW/°C

806 mW

6.4 mW/°C

200

V

A

°C/W

ZXMN3A01F

Document number: DS33528 Rev. 3 - 2

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)





g

g

g

g

)

r

)

r

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance
Diode Forward Voltage (Note 8 & 10)

V

R

DS(ON)

V

GS(th

g

FS

SD

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)

ADVANCED INFORMATION

Reverse Recovery Time

C
C
C

Q

Q

t

D(on

t

D(off

iss

oss

rss

Q
Q

t

t

f

t

r

Reverse Recovery Charge Qrr

Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≦ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. Guaranteed by design. Not subject to production testing.

30

 

 

1


 











s



d













 

0.5 µA

100 nA



2.5 V

0.11 0.12

0.18

3.5

0.85

190

38
20

2.3

3.9

0.6

0.9

1.7

2.3

6.6

2.9

17.7
13



0.95



















ZXMN3A01F

V

V

= 0V, ID = 250µA

GS

V

= 30V, V

DS

±20V, V

V

GS =

V

= VGS, ID = 250µA

DS



V

= 10V, ID = 2.5A

GS



V

= 4.5V, ID = 2A

GS

S

V

= 4.5V, ID = 2.5A

DS

V

V

= 0V, IS = 1.7A, TJ = +25°C

GS

= 25V, VGS = 0V,

V

DS

pF

f = 1MHz

VDS = 15V, VGS = 5V, ID = 2.5A

nC

ns

ns
nC

= 15V, VGS = 10V,

V

DS

I

= 2.5A

D

= 15V , I

V

DD

= 6Ω, VGS = 10V

R

G

= +25°C, IF = 2.5A, di/dt= 100A/µs

T

J

= 0V

GS

DS

= 2.5A,

D

= 0V

ZXMN3A01F

Document number: DS33528 Rev. 3 - 2

3 of 7

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February 2014

© Diodes Incorporated