Diodes ZXMN3A01E6 User Manual
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A01E6
SUMMARY
V
(BR)DSS
= 30V; R
DS(ON)
= 0.12 ID= 3.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
• SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
-
6
3
2
T
O
S
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN3A01E6TA 7” 8mm 3000 units
ZXMN3A01E6TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
3A1
ISSUE 2 - JULY 2002
PINOUT
Top View
1
ZXMN3A01E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
I
D
DM
S
SM
P
P
DSS
GS
D
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
R
R
θJA
θJA
30 V
20 V
3.0
2.4
2.4
10 A
2.4 A
10 A
1.1
8.8
1.7
13.6
-55 to +150 °C
113 °C/W
70 °C/W
mW/°C
mW/°C
A
W
W
ISSUE 2 - JULY 2002
2
CHARACTERISTICS
ZXMN3A01E6
10
R
DS(on)
Limit ed
1
DC
amb
=25°C
1s
100ms
10ms
1ms
100µs
100m
Drain Current (A)
Singl e Pulse
10m
C
I
T
100m 1 10
VDSCollector-Emitter Voltage (V)
Safe Operating Area
120
T
=25°C
amb
100
80
D=0. 5
60
40
D=0. 2
20
Thermal Resistance (°C/W)
100µ 1m 10m 100m 1 10 100 1k
Singl e Pulse
D=0.05
D=0. 1
PulseWidth (s)
Transient Thermal Impedance
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
10
1
Maximum Power (W)
0.1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Singl e Pulse
T
=25°C
amb
Pulse Power Dissipation
ISSUE 2 - JULY 2002
3
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