Diodes ZXMN2B14FH User Manual
ZXMN2B14FH
D
Top view
S
G
20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V
(BR)DSS
20
R
0.055 @ V
0.075 @ V
0.100 @ V
(⍀)I
DS(on)
= 4.5V 4.3
GS
= 2.5V 3.7
GS
= 1.8V 3.2
GS
D
(A)
Description
This new generation of trench MOSFETs from Zetex features low onresistance achievable with low gate drive.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive capability
• SOT23 package
Applications
• DC-DC converters
• Power management functions
D
G
S
• Disconnect switches
• Motor control
Ordering information
Device Reel size
(inches)
ZXMN2B14FHTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Device marking
2B4
Issue 2 - March 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMN2B14FH
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
@ V
@ V
= 4.5V; T
GS
= 4.5V; T
GS
= 4.5V; T
GS
=25°C (b) I
amb
=70°C (b) 3.5
amb
=25°C (a) 3.5
amb
Pulsed drain current (c) I
Continuous source current (body diode) (b) I
Pulsed source current (body diode) (c) I
Power dissipation at T
=25°C (a) P
amb
DSS
GS
D
DM
S
SM
D
Linear derating factor 8 mW/°C
Power dissipation at T
=25°C (b) P
amb
D
Linear derating factor 12 mW/°C
Operating and storage temperature range T
j
, T
stg
20 V
± 8 V
4.3 A
21 A
2.4 A
21 A
1W
1.5 W
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient R
Junction to ambient R
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
⍜JA
⍜JA
125 °C/W
82 °C/W
Issue 2 - March 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Thermal characteristics
ZXMN2B14FH
Issue 2 - March 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Loading...