Diodes ZXMN2B01F User Manual

ZXMN2B01F

D

S

G

D

Top view

S

G

20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability

Summary

V

(BR)DSS

20

R

0.100 @ V

0.150 @ V

0.200 @ V

(⍀)I

DS(on)

= 4.5V 2.4

GS

= 2.5V 2.0

GS

= 1.8V 1.7

GS

D

(A)

Description

This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive capability

• SOT23 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device Reel size

(inches)

ZXMN2B01FTA 7 8 3,000

Tape width

(mm)

Quantity per reel

Device marking

2B1

Issue 2 - March 2007 1 www.zetex.com

ZXMN2B01F

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

@ V

Pulsed drain current

(c)

= 4.5V; T

GS

= 4.5V; T

GS

= 4.5V; T

GS

Continuous source current (body diode)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

(c)

(a)

amb

(b)

=25°C

=70°C

=25°C

(b)

(a)

DSS

I

DM

I

SM

P

GS

D

S

D

Linear derating factor 5 mW/°C

Power dissipation at T

amb

=25°C

(b)

P

D

Linear derating factor 6.4 mW/°C

Operating and storage temperature range T

j

, T

stg

20 V

±8 V

2.4 A

1.9 A

2.1 A

11.8 A

1.4 A

11.8 A

625 mW

806 mW

-55 to +150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction

temperature.

(a)

(b)

R

⍜JA

200 °C/W

155 °C/W

Issue 2 - March 2007 2 www.zetex.com

Thermal characteristics

ZXMN2B01F

Issue 2 - March 2007 3 www.zetex.com