Diodes ZXMN2A14F User Manual
SEMICONDUCTORS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This newgeneration of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
= 20V : RDS(on)=0.06 ; ID= 4.1A
ZXMN2A14F
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVIC E REEL
SIZE
ZXMN2A14FTA 7” 8mm 3000 units
TAPE
WIDTH
QUANTITY
PER REEL
3
2
T
O
S
PINOUT
DEVICE MARKING
•
214
ISSUE 3 - SEPTEMBER 2007
1
ZXMN2A14F
SEMICONDUCTORS
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
=4.5V; TA=25°C
@V
GS
@VGS=4.5V; TA=70°C
@VGS=4.5V; TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
20 V
⫾12 V
4.1
3.3
3.4
19 A
1.7 A
19 A
1
8
mW/°C
1.5
12
mW/°C
-55 to +150 °C
125 °C/W
82 °C/W
A
A
A
W
W
ISSUE 3 - SEPTEMBER 2007
2
SEMICONDUCTORS
CHARACTERISTICS
ZXMN2A14F
ISSUE 3 - SEPTEMBER 2007
3
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