
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This newgeneration of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
= 20V : RDS(on)=0.06 ; ID= 4.1A
ZXMN2A14F
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVIC E REEL
SIZE
ZXMN2A14FTA 7” 8mm 3000 units
TAPE
WIDTH
QUANTITY
PER REEL
3
2
T
O
S
PINOUT
DEVICE MARKING
•
214
ISSUE 3 - SEPTEMBER 2007
1

ZXMN2A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
=4.5V; TA=25°C
@V
GS
@VGS=4.5V; TA=70°C
@VGS=4.5V; TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R
R
⍜JA
⍜JA
20 V
⫾12 V
4.1
3.3
3.4
19 A
1.7 A
19 A
1
8
mW/°C
1.5
12
mW/°C
-55 to +150 °C
125 °C/W
82 °C/W
A
A
A
W
W
ISSUE 3 - SEPTEMBER 2007
2

ZXMN2A14F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
(1)
(1) (3)
(3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING
(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
g
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
20 V ID=250A, VGS=0V
1 AVDS=20V, VGS=0V
100 nA VGS=⫾12V, VDS=0V
0.7 V ID=250A, VDS=V
0.060
0.110⍀⍀
VGS=4.5V, ID=3.4A
=2.5V, ID=2.5A
V
GS
9.4 S VDS=10V,ID=3.4A
544 pF
V
=10V,VGS=0V,
132 pF
85 pF
DS
f=1MHz
4.0 ns
5.3 ns
16.6 ns
9.5 ns
VDD= 10V, VGS=4.5V
ID=1A
R
≅ 6.0⍀
G
6.6 nC
V
=10V,VGS=4.5V,
1.2 nC
2.1 nC
DS
I
D
=3.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(1)
(3)
(3)
V
SD
t
rr
Q
rr
0.85 0.95 V TJ=25°C, IS=(3.3)A,
=0V
V
GS
11.4 ns TJ=25°C, IF=(1.7)A,
4.6 nC
di/dt= 100A/s
GS
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - SEPTEMBER 2007
4

ZXMN2A14F
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuitsin this design/application note are offeredas design ideas. Itis the responsibility of theuser toensure that the circuitis fit for the user's
application andmeets with theuser's requirements. Norepresentation or warranty is given and no liability whatsoever is assumed byZetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach ofstatutory duty, restriction or otherwise)for any damages,loss of profit, business, contract,opportunity or consequentialloss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) maynot be used, applied orreproduced for any purpose orform part of any orderor contract or be regardedas a representation relating
to the products or services concerned.
Terms and Conditions
All productsare sold subjects to Zetex'terms and conditionsof sale, and this disclaimer(save in the event ofa conflict between the twowhen the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling andtransporting, andthe nature of thedevice. The extent of damage
can vary from immediatefunctional or parametric malfunction to degradation offunction or performance in useover time.Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductorsis committed toenvironmental excellence in all aspects of its operations which includes meeting or exceedingregulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and throughthis it is supporting its customers in their compliance withWEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This termdenotes an issued datasheet containingfinalized specifications. However, changes tospecifications may occur, at anytime and
without notice.
ISSUE 3 - SEPTEMBER 2007
7

ZXMN2A14F
PACKAGE OUTLINE PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES INCHES
DIM
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ⍜ 10⬚ TYP 10⬚ TYP
MILLIMETRES INCHES
DIM
© Zetex Semiconductors plc 2007
Europe
Zetex GmbH
Kustermannpark
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
8
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 3 - SEPTEMBER 2007