Diodes ZXMN2A04DN8 User Manual
ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
= 0.025 ;ID= 7.7A
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
SO8
ORDERING INFORMATION
DEVICE REEL TAPE
ZXMN2A04DN8TA 7
ZXMN2A04DN8TC 13’‘ 12mm 2500 units
WIDTH
’‘ 12mm 500 units
QUANTITY
PER REEL
DEVICE MARKING
ZXMN
2A04D
ISSUE 1 - JULY 2004
PINOUT
Top view
1
SEMICONDUCTORS
ZXMN2A04DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)
GS
(VGS=10V; TA=70°C)
(VGS=10V; TA=25°C)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a) (d)
(b) (d)
(b) (d)
(a) (d)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(a) (e)
P
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b) (d)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
Junction to Ambient
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
(a) (d)
(b) (e)
(b) (d)
R
R
R
⍜JA
⍜JA
⍜JA
20 V
⫾12
7.7
6.2
5.9
38 A
2.9 A
38 A
1.25
10
mW/°C
1.8
14
mW/°C
2.1
17
mW/°C
-55 to +150 °C
100 °C/W
70 °C/W
60 °C/W
V
A
A
A
W
W
W
SEMICONDUCTORS
ISSUE 1 - JULY 2004
2
CHARACTERISTICS
ZXMN2A04DN8
ISSUE 1 - JULY 2004
3
SEMICONDUCTORS
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