Diodes ZXMN2A03E6 User Manual

20V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN2A03E6

SUMMARY
V

(BR)DSS

= 20V; R

DS(ON)

= 0.055 ID= 4.6A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

•

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

-

6

3

2

T

O

S

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN2A03 E6 TA 7” 8mm 3000 units

ZXMN2A03 E6 TC 13” 8mm 10000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

2A3

ISSUE 4 - SEPTEMBER 2005

PINOUT

Top View

1

ZXMN2A03E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate Source Voltage V

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

Pulsed Drain Current (c) I

Continuous Source Current (Body Diode) (b) I

Pulsed Source Current (Body Diode) (c) I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range Tj:T

I

D

DM

S

SM

P

P

DSS

GS

D

D

stg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph. Refer to transient thermal impedance graph.

R

R

θJA

θJA

20 V

12 V

4.6

3.7

3.7

16 A

2.7 A

16 A

1.1

8.8

1.7

13.6

-55 to +150 °C

113 °C/W

70 °C/W

mW/°C

mW/°C

A

W

W

ISSUE 4 - SEPTEMBER 2005

2

TYPICAL CHARACTERISTICS

ZXMN2A03E6

ISSUE 4 - SEPTEMBER 2005

3

ZXMN2A03E6

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (1)(3) g

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

= 25°C unless otherwise stated).

A

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

SD

rr

rr

20 V

1 ␮AVDS=20V, VGS=0V

100 nA VGS=⫾12V, VDS=0V

0.7 V

0.055

⍀

0.100

⍀

13 S VDS=10V,ID=7.2A

837 pF

168 pF

90 pF

4.7 n s

5.7 n s

18.5 ns

10.5 ns

8.2 n C

2.3 n C

2.0 n C

0.85 0.95 V TJ=25°C, IS=4.1A,

12 ns TJ=25°C, IF=1.9A,

4.9 n C

ID=250µA, VGS=0V

ID=250µA, VDS=V

VGS=4.5V, ID=7.2A
VGS=2.5V, ID=4.6A

VDS=10 V, VGS=0V,
f=1MHz

VDD=10V, ID=1A
RG=6.0Ω,V

VDS=10V,VGS=4.5V,
I

=7.2A

D

VGS=0V

di/dt= 100A/µs

GS

GS

=4.5V

ISSUE 4 - SEPTEMBER 2005

4

TYPICAL CHARACTERISTICS

ZXMN2A03E6

T = 25°C

10

1

0.1

Drain Current (A)

D

I

7V

3V

2.5V

2V

1.5V

10

V

GS

0.1

Drain Current (A)

D

I

0.1 1 10

VDSDrai n-Source Voltage (V)

Output Characteristics

1.6

10

T = 150°C

T = 25°C

1

1.4

GS( t h)

1.2

and V

1.0

DS(on)

0.8

Drain Current (A)

D

I

0.1
123

VDS= 10V

0.6

Normalised R

0.4

VGSGate-Source Voltage (V)

Typical Transfer Characteristics

1

T = 150°C

7V

3V

2.5V
2V

1.5V

V

GS

1V

0.1 1 10

VDSDrai n-Source Voltage (V)

Output Characteristics

VGS=4.5V
I

=7.2A

D

VGS=V

DS

ID= 250uA

R

DS(on)

V

GS(t h)

-50 0 50 100 150

Tj Junction Temperatur e (°C)

Normalised Curves v Temperature

1.5V

10

1

0.1

Drain-Source On-Resistance (Ω)

0.1 1 10

DS(on)

R

IDDrain Current (A)

On-Resistance v Drain Current

ISSUE 4 - SEPTEMBER 2005

T = 25°C

V

GS

2V

2.5V
3V

7V

10

1

Reverse Drain Current (A)

SD

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2

T = 150°C

Source-Drain Voltage (V)

V

SD

T = 25°C

Source-Drain Diode Forward Volt age

5

ZXMN2A03E6

TYPICAL CHARACTERISTICS

1400

1200

1000

C

800

600

400

200

C Capacitance ( pF)

0

0.1 1 10

ISS

C

OSS

VDS-Drain-SourceVoltage(V)

VGS=0V
f=1MHz

C

RSS

4.5

ID=7.2A

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Gate-Source Voltage (V)

0.0

GS

0510

V

Q - Cha rge ( nC)

VDS= 10V

Gate-SourceVoltagevGateChargeCapacitance v Drain-Source Voltage

ISSUE 4 - SEPTEMBER 2005

6

PACKAGE OUTLINE PAD LAYOUT DETAILS

e

b

2

L

ZXMN2A03E6

E1

DATUM A

C

AA2

E

e1

D

a

A1

CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.

PACKAGE DIMENSIONS

DIM

Millimetres Inches

Min Max Min Max Min Max Min Max

DIM

A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118

A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069

A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002

b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF

C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF

D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10°

Millimetres Inches

© Zetex Semiconductors plc 2005

Europe

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This publicationis issued toprovide outline informationonly which (unless agreed by the Company inwriting) may notbe used, appliedor reproduced
for any purposeor form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product information, log on to www.zetex.com

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ISSUE 4 - SEPTEMBER 2005

7