Diodes ZXMN2A03E6 User Manual

20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A03E6
SUMMARY V
(BR)DSS
= 20V; R
DS(ON)
= 0.055 ID= 4.6A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
-
6
3
2
T
O
S
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN2A03 E6 TA 7” 8mm 3000 units
ZXMN2A03 E6 TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
2A3
ISSUE 4 - SEPTEMBER 2005
PINOUT
Top View
1
ZXMN2A03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at TA=25°C (a) Linear Derating Factor
Power Dissipation at TA=25°C (b) Linear Derating Factor
Operating and Storage Temperature Range Tj:T
I
D
DM
S
SM
P
P
DSS
GS
D
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.
R
R
θJA
θJA
20 V
12 V
4.6
3.7
3.7
16 A
2.7 A
16 A
1.1
8.8
1.7
13.6
-55 to +150 °C
113 °C/W
70 °C/W
mW/°C
mW/°C
A
W
W
ISSUE 4 - SEPTEMBER 2005
2
TYPICAL CHARACTERISTICS
ZXMN2A03E6
ISSUE 4 - SEPTEMBER 2005
3
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