Diodes ZXMN2A01E6 User Manual
20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01E6
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.12 ID= 3.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizesauniquestructurethat
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
•
APPLICATIONS
•
DC - DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
-
6
3
2
T
O
S
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN2A01E6TA 7” 8mm 3000 units
ZXMN2A01 E6TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
2A1
ISSUE 3 - FEBRUARY 2006
PINOUT
Top View
1
ZXMN2A01E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
I
D
DM
S
SM
P
P
DSS
GS
D
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
R
R
θJA
θJA
20 V
12 V
3.1
2.5
2.5
11 A
2.4 A
11 A
1.1
8.8
1.7
13.6
-55 to +150 °C
113 °C/W
70 °C/W
mW/°C
mW/°C
A
W
W
ISSUE 3 - FEBRUARY 2006
2
CHARACTERISTICS
ZXMN2A01E6
ISSUE 3 - FEBRUARY 2006
3
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