Diodes ZXMN20B28K User Manual

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Product Summary

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V

R

(BR)DSS

200V

DS(on)

750mΩ @ V

780mΩ @ VGS = 5V 2.3A

GS = 10V 2.3A

T

= 25°C

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Description and Applications

This MOSFET features low on-resistance, fast switching and a high
avalanche withstand capability, making it ideal for high efficiency
power management applications.

• SLIC line drivers for VoIP applications

• Transformer driving switch

• Power management functions

• Motor control

• Uninterrupted power supply

TO252-3L

Top View

200V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• High avalanche energy pulse withstand capability

• Low gate drive voltage (Logic level capable)

• Low input capacitance

• Low on-resistance

• Fast switching speed

• “Green” Component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic “Green” Molding Compound,

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

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GS

Pin Out – Top View

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Equivalent Circuit

ZXMN20B28K

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quanti ty per reel

ZXMN20B28KTC See below 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

ZXMN20B28K

Document Number DS31984 Rev. 2 - 2

ZXMN
20B28

YYWW

www.diodes.com

ZXMN = Product Type Marking Code, Line 1
20B28 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week

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01-52

October 2009

© Diodes Incorporated

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ZXMN20B28K

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage

V
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 7) E
Single Pulsed Avalanche Current (Note 7) I
Repetitive Avalanche Energy (Note 4) E
Repetitive Avalanche Current (Note 4) I

(Note 3)

Continuous Drain current

V

= 10V

GS

TA = 70°C (Note 3)
(Note 2)

Pulsed Drain current

V

= 10V

GS

(Note 4)
Continuous Source current (Body diode) (Note 2)
Pulsed Source current (Body diode) (Note 4)

DSS

V

GS

73 mJ

S

5.5 A

S

4.5 mJ

R

5.5 A

R

I

D

IDM

I

S

I

SM

200 V
±20

V

2.3

1.8

A

1.5

17.3 A

5.7 A

17.3 A

Thermal Characteristics

Characteristic Symbol Value Unit

(Note 2)
Power dissipation

Linear derating factor

(Note 3)

P

D

(Note 6)

(Note 2)
Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range

Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note 2, except the device is measured at t ≤ 10 sec.

4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. UIS in production with L = 4.83mH, I

(Note 3) 12.3

(Note 6) 57.3

= 5.5A, RG = 25Ω, VDD = 100V, starting T

AS

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JA

θ

R

JL

T

, T

J

STG

= 25°C.

J

4.3

34.4

10.2

76.0

2.2

17.4

29.1

1.15

-55 to 150

W

mW/°C

°C/W

°C/W

°C

ZXMN20B28K

Document Number DS31984 Rev. 2 - 2

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Thermal Characteristics

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ZXMN20B28K

10

R

DS(on)

Limited

1

DC

T

=25°C

amb

1oz FR4

1s

100ms

10ms

1ms

100µs

100m

10m

Drain Current (A)

25mm x 25mm

D

I

1m

110100

VDS Drain-Source Voltage (V)

Safe Operating Area

60

T

=25°C

50
40

30
20

10

Thermal Resistance (°C/W)

amb

25mm x 25mm

1oz FR4

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedan ce

10

R

DS(on)

Limited

1

100m

10m

Drain Current (A)

D

I

1m

DC

1s

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

110100

10ms

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

35

T

=25°C

30
25
20
15
10

Thermal Re si stance (°C/W )

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

5
0

100µ 1m 10m 100m 1 10 100 1k

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedance

Single Pulse

T

=25°C

100

10

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

1oz FR4

Pulse Width (s)

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

4

3

2

1

0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

Derating Curve

ZXMN20B28K

Document Number DS31984 Rev. 2 - 2

3 of 8

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October 2009

© Diodes Incorporated