Diodes ZXMN2088DE6 User Manual

Part no.

ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability

Summary

V

(BR)DSS

20

R

0.200 @ VGS= 4.5V 2.1

0.240 @ VGS= 2.5V 1.9

DS(on)

(Ω)

I

(A)

D

0.310 @ VGS= 1.8V 1.7

Description

This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive.

Features

• Low on-resistance

• Low gate drive capability

• SOT23-6 (dual) package

Applications

• Power Management functions

• Disconnect switches

• Relay driving and load switching

Ordering information

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN2088DE6TA 7 8 3,000

Device marking

2088

G1 S2 G2

Pinout – top view

D1 S1 D2

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ZXMN2088DE6

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-Source voltage V

20 V

DSS

Gate-Source voltage VGS

Continuous Drain current @ VGS= 4.5V; TA=25°C

@ V

= 4.5V; TA=70°C

GS

@ VGS= 4.5V; TA=25°C

Pulsed Drain current

Power dissipation at TA =25°C

(c)

IDM 8 A

(a) (d)

(b) (d)

(a) (d)

I

D

P

D

Linear derating factor

Power dissipation at TA =25°C

(a) (e)

P

D

Linear derating factor

Power dissipation at TA =25°C

(b) (d)

P

D

Linear derating factor

Operating and storage temperature range Tj, T

± 8

2.1

1.7

0.9

7.2

1.1

8.8

1.3

10.4

-55 to +150

stg

V

A

W

mW/°C

W

mW/°C

W

mW/°C

°C

Thermal resistance Parameter Symbol Value Unit

Junction to Ambient

(a) (d)

R

(a) (e)

R

139

θJA

113

θJA

°C/W

Junction to Ambient

(b) (d)

R

96

θJA

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions. (b) As above measured at t ≤ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum

junction temperature. (d) For device with one active die (e) For device with two active die running at equal power.

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ZXMN2088DE6

Thermal Characteristics

10

R

DS(on)

Limited

1

DC

1s

100m

Drain Current (A)

D

10m

I

Single Pul se

T

amb

1 Die Active (a)(d)

100ms

10ms

=25°C

110

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating A rea

140

T

=25°C

amb

120

100

80

D=0.5

60

D=0.2

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

1 Die Active (a)(d)

D=0.1

D=0.05

Single Pul se

Transient Thermal Impedance

1.2

1.0

0.8

0.6

1 Die Active (a)(d)

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

2 Die Active (a)(e)

Temperature (°C)

Derating Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

T

=25°C

amb

1 Die Active (a)(d)

Pulse Power Dissipation

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