Diodes ZXMN10B08E6 User Manual

Product Summary

V

Max R

(BR)DSS

100V

DS(on)

230mΩ @ V

300mΩ @ VGS = 4.5V

= 10V

GS

Description and Applications

This new generation TRENCH MOSFETs from Diodes utilizes a

unique structure that combines the benefits of low on-resistance with

fast switching speed. This makes them ideal for high efficiency, low

voltage, power management applications.

• DC - DC Converters

• Power Management Functions

NEW PRODUCT

• Disconnect Switches

• Motor Control

SOT26

Top View Pinout Top-view

Max I

D

TA = +25°C

(Note 6)

1.9A

1.68A

ZXMN10B08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• SOT26 Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Device Symbol

e3

Ordering Information (Note 4)

Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel

ZXMN10B08E6TA 7 8 3,000
ZXMN10B08E6TC 13 8 10,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMN10B08E6

Datasheet Number: DS33570 Rev. 2 – 2

10B8

10B8 = Product Type Marking Code

1 of 7

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May 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

V

DSS

V

GS

(Note 6)

Continuous Drain Current

V

GS

= 10V

TA = +70°C (Note 6)

I

D

(Note 5) 1.6

Pulsed Drain Current (Note 7)

Continuous Source Current (Body Diode) (Note 6)

Pulsed Source Current (Body Diode) (Note 7)

Thermal Characteristics (@T

NEW PRODUCT

Characteristic Symbol Value Unit

= +25°C, unless otherwise specified.)

A

Power Dissipation (Note 5)
Linear Derating Factor

Power Dissipation (Note 6)
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Note 5)

(Note 6) 73

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.

I

DM

I

S

I

SM

P

D

P

D

R

JA

θ

T

, T

J

STG

-55 to +150

Thermal Characteristics

ZXMN10B08E6

100 V

±20

1.9

1.5

9 A

2.5 A

9 A

1.1

8.8

1.7

13.6

113

V

A

W

mW/°C

W

mW/°C

°C/W

°C

ZXMN10B08E6

Datasheet Number: DS33570 Rev. 2 – 2

2 of 7

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May 2014

© Diodes Incorporated

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance (Notes 8 & 10)

Diode Forward Voltage (Note 8)

NEW PRODUCT

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Charge (Note 9)

Total Gate Charge (Note 9)

Gate-Source Charge (Note 9)

Gate-Drain Charge (Note 9)

Turn-On Delay Time (Note 9)

Turn-On Rise Time (Note 9)

Turn-Off Delay Time (Note 9)

Turn-Off Fall Time (Note 9)

Reverse Recovery Time

Reverse Recovery Charge

Notes: 8. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

ZXMN10B08E6

Datasheet Number: DS33570 Rev. 2 – 2

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

⎯ ⎯

DS(ON)

g

fs

V

⎯

SD

C

⎯

iss

C

oss

C

⎯

rss

Q

⎯

g

Q

g

Q

⎯

gs

Q

⎯

gd

t

d(on)

t

⎯

r

t

⎯

d(off)

t

f

t

rr

Q

⎯

rr

www.diodes.com

100

⎯ ⎯

⎯ ⎯

1.0

⎯

0.85 0.95 V

497

⎯

⎯

⎯

12.1

⎯

3 of 7

⎯ ⎯

0.5 µA

100 nA

⎯

3.0 V

0.23

0.30

0.50

4.8

29

18

5.0

9.2

1.7

2.5

2.9

2.1

5.0

32

40

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

ZXMN10B08E6

V

ID = 250µA, VGS = 0V

VDS = 100V, VGS = 0V

VGS = ±20V, VDS = 0V

ID = 250µA, VDS = VGS

V

= 10V, ID = 1.6A

GS

Ω

V

= 4.5V, ID = 1.4A

GS

V

= 4.3V, ID = 1.1A

GS

S

VDS = 15V, ID = 1.6A

TJ = +25°C, IS = 2.0A, VGS = 0V

pF

V

= 50V, VGS = 0V

pF

pF

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

DS

f = 1.0MHz

VDS = 50V , VGS = 5V, ID = 1.6A

V

= 50V, VGS = 10V,

DS

= 1.6A

I

D

= 50V, ID = 1.0A,

V

DD

≅ 6.0Ω, VGS = 10V

R

G

= +25°C, IF = 1.7A,

T

J

di/dt = 100A/μs

May 2014

© Diodes Incorporated