Diodes ZXMN10A25K User Manual

A

f

D

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Product Summary

Max I

D

TA = +25°C

6.4A

5.8A

V

R

(BR)DSS

100V

125mΩ @ V

150mΩ @ VGS= 6V

Package

DS(ON)

= 10V

GS

TO252

(DPAK)

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• DC-DC Converters

• Power Management Functions

• Disconnect Switches

• Motor Control

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Green

ZXMN10A25K

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Fast Switching Speed

• Low Gate Drive

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

TO252

Top View

D

GS

Pin Out -Top View

Equivalent Circuit

Ordering Information (4 & 5)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN10A25KTC ZXMN10A25 13 16 2,500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For Packaging Details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

5. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

ZXMN
10A25

ZXMN10A25K

Document number: DS33569 Rev. 3 - 2

www.diodes.com

ZXMN10A25 = Product Type Marking Code

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ZXMN10A25K

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

Continuous Drain current

V

= 10V

GS

(Note 7)
TA = +70°C (Note 7)

V

DSS

V

GS

I

D

100 V
±20

V

6.4
5

A

(Note 6) 4.2
Pulsed Drain current (Note 8)
Continuous Source current (Body diode) (Note 7)
Pulsed Source current (Body diode) (Note 8)

I

DM

I

S

I

SM

21 A
10 A
21 A

Thermal Characteristics

Characteristic Symbol Value Unit

(Note 6)

Power dissipation
Linear derating factor

(Note 7)

P

D

(Note 9)
(Note 6)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Note 10)
Operating and storage temperature range

Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.

8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

10. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 7) 12.7
(Note 9) 59.1

R

JA

θ

R

JL

T

, T

J

STG

ZXMN10A25K

Document number: DS33569 Rev. 3 - 2

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4.25
34

9.85

78.7

2.11

16.8

29.4

1.43

-55 to 150

W

mW/°C

°C/W

°C

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Thermal Characteristics

R

DS(on)

10

Limit

1

DC

1s

100m

Drain Current (A)

D

I

10m

T

amb

25mm x 25 mm

1oz FR4

100ms

=25°C

110100

VDS Drain-Source Voltage (V)

Safe Operating Area

60

50
40

30

T

=25°C

amb

25mm x 25mm

1oz FR4

D=0.5

10ms

1ms

100µs

10

100m

Drain Current (A )

D

I

10m

30

25
20

15

R

DS(on)

Limit

1

DC

1s

100ms

T

=25°C

amb

50mm x 50 mm

2oz FR4

10ms

1ms

1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

50mm x 50mm

2oz FR4

D=0.5

ZXMN10A25K

100µs

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W )

Pulse Width (s)

D=0.1

D=0.05

Single Pulse

Transient Thermal Impedance

Single Pu lse

T

=25°C

100

amb

50mm x 50mm

2oz FR4

10

25mm x 25 mm

1oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Pulse Power Dissipation

10

D=0.2

5
0

100µ 1m 10m 100m 1 10 100 1k

Therma l Re sistance ( °C/W)

Pul se Width (s)

D=0.1

D=0.05

Single Pulse

Transient Thermal Impedance

4.5

4.0

3.5

3.0

2.5

50mm x 50 mm

2oz FR4

25mm x 25 mm

1oz FR4

2.0

1.5

1.0

0.5

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

ZXMN10A25K

Document number: DS33569 Rev. 3 - 2

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July 2012

© Diodes Incorporated