Diodes ZXMN10A25G User Manual
Product Summary
Green
ZXMN10A25G
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
NEW PRODUCT
I
V
R
(BR)DSS
100V
125mΩ @ V
150mΩ @ VGS = 6.0V
DS(on) max
GS
= 10V
D
TA = +25°C
4.0A
3.7A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
DC Motor Control
DC-AC Inverters
SOT223
Top View
Pin Out - Top View
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Qualification Case Packaging
ZXMN10A25GTA Standard SOT223 1,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
ZXMN
10A25
ZXMN10A25 = Product Type Marking Code
1 of 7
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April 2014
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 10V, t ≦10 sec
T
= +25°C
A
= +70°C
T
A
V
V
Continuous Drain Current (Note 5) VGS = 10V TA = +25°C ID
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Pulsed Source Current (10μs pulse, duty cycle = 1%)
Thermal Resistance (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5), TA = +25°C
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 5)
R
Total Power Dissipation (Note 5), TA = +25°C, t ≦10 sec
Linear derating factor
Thermal Resistance, Junction to Ambient, t ≦10 sec. (Note 5)
Operating and Storage Temperature Range
R
T
J, TSTG
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
DSS
GSS
I
I
I
DM
I
SM
P
P
ZXMN10A25G
D
S
D
JA
D
JA
100 V
20
4.0
3.2
V
A
2.9
5.4 A
17 A
17 A
2.0
16
W
mW/°C
62.5 °C/W
3.9
31
W
mW/°C
32 °C/W
-55 to +150 °C
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
2 of 7
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April 2014
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
100 — — V
— —
— — ±100 nA
0.5 µA
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
|Y
V
fs
SD
2.0
— —
— — 150
|
—
—
—
7.3 — S
0.85 0.95 V
4.0 V
125
VDS = VGS, ID = 250µA
V
mΩ
V
VDS = 15V, ID = 2.9A
VGS = 0V, IS = 4.0A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
C
C
C
Q
Q
Q
Q
t
D(on)
t
D(off)
Q
t
iss
oss
rss
gd
t
t
rr
g
g
gs
r
f
rr
— 859 —
—
—
57
33
— 9.6 — nC
—
—
— 5.4 —
—
—
— 18 —
—
17
3.8
4.9
3.7
9.4
— 40.5
— 62
—
—
—
—
—
—
—
V
pF
f = 1.0MHz
VDS = 50V, VGS = 5.0V, ID = 2.9A
nC
V
V
ns
I
ns
V
dI/dt = 100A/μs
nC
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
3 of 7
www.diodes.com
ZXMN10A25G
= 10V, ID = 2.9A
GS
= 6.0V, ID = 2.6A
GS
= 50V, VGS = 0V
DS
= 50V, VGS = 10V, ID = 2.9A
DS
= 50V, V
DS
= 1.0 ARG = 6.0
D
= 0V, IS = 2.9A,
GS
= 10V,
GS
© Diodes Incorporated
April 2014
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