Diodes ZXMN10A11K User Manual

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Product Summary

I

V

R

(BR)DSS

100V

DS(on)

350mΩ @ V

450mΩ @ VGS = 6V 3.1A

GS = 10V 3.5A

= 25°C

T

A

D

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

• Motor control

• DC-DC Converters

• Power management functions

• Uninterrupted power supply

TO252-3L

Top View

GS

Pin Out – Top View

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ZXMN10A11K

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Fast switching speed

• Low input capacitance

• “Green” Component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic “Green” Molding Compound,

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

G

D

S

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quanti ty per reel

ZXMN10A11KTC See Below 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

ZXMN10A11K

Document Number DS32058 Rev. 2 - 2

ZXMN
10A11

YYWW

www.diodes.com

ZXMN = Product Type Marking Code, Line 1
10A11 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)

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ZXMN10A11K

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

(Note 3)

Continuous Drain current

V

= 10V

GS

TA = 70°C (Note 3)
(Note 2)

Pulsed Drain current

V

= 10V

GS

(Note 4)
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)

V

V

DSS

GS

I

D

IDM

I

S

I

SM

100 V
±20

V

3.5

2.8

A

2.4

9.9 A

8.4 A

9.9 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

(Note 2)
Power dissipation

Linear derating factor

(Note 3)

P

D

(Note 6)

(Note 2)
Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range

Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note 2, except the device is measured at t ≤ 10 sec.

4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

(Note 3) 14.7

(Note 6) 59.1

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JA

θ

R

JL

T

, T

J

STG

4.06

32.4

8.5

68.0

2.11

16.8

30.8

1.10

-55 to 150

W

mW/°C

°C/W

°C/W

°C

ZXMN10A11K

Document Number DS32058 Rev. 2 - 2

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Thermal Characteristics

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ZXMN10A11K

10

R

DS(on)

Limited

1

DC

1s

100m

Drain Current (A)

D

I

10m

25mm x 25mm

T

=25°C

amb

1oz FR4

100ms

10ms

1ms

100µs

1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

T

60
50

=25°C

amb

25mm x 25mm

1oz FR4

40

D=0.5

30
20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Therma l Re sistance ( °C/W)

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedance

D=0.1

10

R

DS(on)

Limited

1

DC

1s

100m

Drain Current (A)

D

I

10m

50mm x 50mm

T

=25°C

amb

2oz FR4

100ms

10ms

1ms

100µs

110100

VDS Drain-Source Voltage (V)

Safe Operating Area

35
30
25
20
15
10

5
0

100µ 1m 10m 100m 1 10 100 1k

Therma l Resistance (°C /W)

T

=25°C

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

D=0.05

Single Pulse

Puls e Width (s)

Transient Thermal Impedance

D=0.1

4.5

100

10

Single Pulse

T

=25°C

amb

50mm x 50mm

2oz FR4

4.0

3.5

3.0

2.5

2.0

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

1.5

25mm x 25mm

1oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipati on (W)

Puls e Width (s)

Pulse Power Dissipation

ZXMN10A11K

Document Number DS32058 Rev. 2 - 2

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1.0

0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipati on (W)

Temperature (°C)

Derating Curve

January 2010

© Diodes Incorporated