Diodes ZXMN10A11G User Manual

A

f

Product Summary

V

R

(BR)DSS

100V

DS(on)

350mΩ @ V

450mΩ @ VGS = 6.0V

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• Motor control

ADVANCE INFORMATION

• DC-DC Converters

• Power management functions

• Uninterrupted power supply

SOT223

Top View

= 25°C

T

A

2.4A

2.1A

Product Line o

Diodes Incorporated

ZXMN10A11G

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Fast switching speed

• Low gate drive

• Low input capacitance

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

D

G

S

Pin Out - Top View

Equivalent Circuit

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN10A11GTA See below 7 12 1,000

Marking Information

ZXMN

10A11

ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

1 of 8

www.diodes.com

ZXMN = Product Type Marking Code, Line 1 10A11 = Product Type Marking Code, Line 2

January 2010

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f

θ

Product Line o

Diodes Incorporated

ZXMN10A11G

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage

Continuous Drain current

V

GS

= 10V

(Note 2) TA = 70°C (Note 2)

V

DSS

V

GS

I

D

100 V ±20

2.4

1.9

(Note 1) 1.7

Pulsed Drain current

V

GS

= 10V Continuous Source current (Body diode) (Note 2) Pulsed Source current (Body diode) (Note3 )

(Note 3)

IDM

I

S

I

SM

7.9 A

4.6 A

7.9 A

Thermal Characteristics @T

ADVANCE INFORMATION

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 4)

Operating and storage temperature range

Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

2. Same as note (1), except the device is measured at t ≤ 10 sec.

3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

4. Thermal resistance from junction to solder-point (at the end of the drain lead)

Characteristic Symbol Value Unit

= 25°C unless otherwise specified

A

(Note 1)

P

D

(Note 2) (Note 1)

(Note 2) 32.0

R

JA

θ

R

JL

, T

T

J

STG

2.0 16

3.9 31

62.5

9.8

-55 to 150

V

A

W

mW/°C

°C/W °C/W

°C

ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

2 of 8

www.diodes.com

January 2010

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f

Thermal Characteristics

10

R

DS(on)

Limited

1

Product Line o

Diodes Incorporated

ZXMN10A11G

2.0

1.6

100m

ADVANCE INFORMATION

Drain Current (A) I

10m

D

DC

1s

100ms

10ms

Single Pulse

T

=25°C

amb

1 10 100

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

70

T

=25°C

amb

60 50 40

D=0.5

30 20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Puls e Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Imped ance

1.2

0.8

0.4

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

Sing le Pulse

T

=25°C

100

10

amb

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

3 of 8

www.diodes.com

January 2010