Diodes ZXMN10A08G User Manual

ZXMN10A08G 100V SOT223 N-channel enhancement mode MOSFET

Summary

V

(BR)DSS

100

R

DS(on)

0.250 @ V

0.300 @ V

(⍀) I

= 10V 2.9

GS

= 6V 2.6

GS

D

(A)

Description

This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• SOT223 package

Applications

• DC-DC converters

D

G

S

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device Reel size

(inches)

ZXMN10A08GTA 7 12 1,000

Tape width

(mm)

Quantity

per reel

D

Pinout - top view

D

G

Device marking

ZXMN 10A08

Issue 1 - June 2006 1 www.zetex.com

ZXMN10A08G

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

@ V

(c)

Pulsed drain current

= 10V; T

GS

= 10V; T

GS

= 10V; T

GS

Continuous source current (body diode)

(c)

(a)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

(b)

amb

= 25°C

= 70°C

= 25°C

(b)

(a)

DSS

I

DM

I

SM

P

GS

D

S

D

100 V

±20 V

2.9 A

2.3 A

2.0 A

11 A

5A

11 A

2W

Linear derating factor 16 mW/°C

Power dissipation at T

amb

=25°C

(b)

P

D

3.9 W

Linear derating factor 31 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to +150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 PCB measured at t (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300

temperature.

(a)

(b)

ⱕ10 sec.

Issue 1 - June 2006 2 www.zetex.com

R

⍜JA

62.5 °C/W

32 °C/W

␮s - pulse width limited by maximum junction

Thermal characteristics

ZXMN10A08G

Issue 1 - June 2006 3 www.zetex.com