Diodes ZXMN10A08E6 User Manual

A

f

Product Summary

V

Max R

(BR)DSS

100V

DS(on)

250mΩ @ V

300mΩ @ VGS = 6V

= 10V

GS

Description and Applications

This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC - DC converters

• Power management functions

• Disconnect switches

• Motor control

SOT26

Top View Pinout Top-view

Max I

D

TA = 25°C

(Note 5)

1.9A

1.68A

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ZXMN10A08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Device symbol

Ordering Information (Note 3)

Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel

ZXMN10A08E6TA 7 8 3000
ZXMN10A08E6TC 13 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

10A8 = Product Type Marking Code

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ZXMN10A08E6

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

V

DSS

V

GS

Note 5)

Continuous Drain current

V

= 10V

GS

TA=70°C (Note 5)
(Note 4) 1.5

I

D

(Note 7) 3.5
Pulsed Drain current (Note 6)

Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)

Thermal Characteristics @T

NEW PRODUCT

Characteristic Symbol Value Unit

= 25°C unless otherwise specified

A

I

DM

I

S

I

SM

(Note 4)

Power Dissipation

(Note 5) 1.7

P

D

(Note 7) 6.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)

Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 4)

(Note 5) 73.5

R

JA

θ

R

JL

T

, T

J

STG

-55 to +150

100 V
±20

V

1.9

1.5
A

8.6 A

2.5 A

8.6 A

1.1
W

114

19.7

°C/W
°C/W

°C

Thermal Characteristics

10

R

DS(on)

Limited

1

100m

Single Pulse

Drain Current (A)

C

10m

T

I

120

100

Thermal Resista n ce (°C/W)

=25°C

amb

100m 1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

80

D=0.5

60
40

D=0.2

20

100µ 1m 10m 100m 1 10 100 1k

Transient Thermal Impedance

DC

1s
100ms

10ms

1ms

D=0.1

Pulse Width (s)

100µs

Single Pulse

D=0.05

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s )

Single Pulse

T

=25°C

amb

Pulse P ower Diss ip a tion

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

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)

r

r

g

g

g

)

r

)

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ZXMN10A08E6

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

100

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

ID = 250μA, VGS = 0V

0.5

100 nA

μA

V
VGS = ±20V, VDS = 0V

= 100V, VGS = 0V

DS

ON CHARACTERISTICS

Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)

Diode Forward Voltage (Note 8)
Reverse recovery time (Note 10)

NEW PRODUCT

Reverse recovery charge (Note 10)

V

GS(th

R

DS (ON)

V

g

fs

SD

t

r

Q

r

2.0

⎯ ⎯

⎯
⎯

⎯

⎯

5.0

4.0 V

0.25

0.30
⎯

Ω
S

0.87 0.95 V
27
32

⎯
⎯

ns

nC

ID = 250μA, VDS = VGS
V

= 10V, ID = 3.2A

GS

V

= 6V, ID = 2.6A

GS

V

= 15V, ID = 3.2A

DS

IS = 3.2A, VGS = 0V
I

= 1.2A, di/dt = 100A/μs

S

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Charge (Note 9)
Total Gate Charge (Note 9)

Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)

Notes: 8. Measured under pulsed conditions. Width 300μs. Duty cycle 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

C

iss

C

oss

C

rss

Q

g

Q

⎯

Q

⎯

s

Q

⎯

d

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

⎯
⎯
⎯

⎯

405

28.2

14.2

4.2

7.7

1.8

2.1

3.4

2.2
8

3.2

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC

nC
nC

ns
ns
ns
ns

V

= 50V, VGS = 0V

DS

f = 1MHz
V

= 5V, VDS = 50V

GS

I

= 1.2A

D

V

= 10V, VDS = 50V

GS

I

= 1.2A

D

V

= 30V, VGS = 10V

DD

= 1.2A, RG ≅ 6.0Ω

I

D

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

3 of 7

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March 2012

© Diodes Incorporated