Diodes ZXMN10A08E6 User Manual

A

f

Product Summary

V

Max R

(BR)DSS

100V

DS(on)

250mΩ @ V

300mΩ @ VGS = 6V

= 10V

GS

Description and Applications

This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC - DC converters

• Power management functions

• Disconnect switches

• Motor control

SOT26

Top View Pinout Top-view

Max I

D

TA = 25°C

(Note 5)

1.9A

1.68A

Product Line o

Diodes Incorporated

ZXMN10A08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Device symbol

Ordering Information (Note 3)

Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel

ZXMN10A08E6TA 7 8 3000
ZXMN10A08E6TC 13 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

10A8 = Product Type Marking Code

1 of 7

www.diodes.com

March 2012

© Diodes Incorporated

A

f

θ

Product Line o

Diodes Incorporated

ZXMN10A08E6

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

V

DSS

V

GS

Note 5)

Continuous Drain current

V

= 10V

GS

TA=70°C (Note 5)
(Note 4) 1.5

I

D

(Note 7) 3.5
Pulsed Drain current (Note 6)

Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)

Thermal Characteristics @T

NEW PRODUCT

Characteristic Symbol Value Unit

= 25°C unless otherwise specified

A

I

DM

I

S

I

SM

(Note 4)

Power Dissipation

(Note 5) 1.7

P

D

(Note 7) 6.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)

Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 4)

(Note 5) 73.5

R

JA

θ

R

JL

T

, T

J

STG

-55 to +150

100 V
±20

V

1.9

1.5
A

8.6 A

2.5 A

8.6 A

1.1
W

114

19.7

°C/W
°C/W

°C

Thermal Characteristics

10

R

DS(on)

Limited

1

100m

Single Pulse

Drain Current (A)

C

10m

T

I

120

100

Thermal Resista n ce (°C/W)

=25°C

amb

100m 1 10 100

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

80

D=0.5

60
40

D=0.2

20

100µ 1m 10m 100m 1 10 100 1k

Transient Thermal Impedance

DC

1s
100ms

10ms

1ms

D=0.1

Pulse Width (s)

100µs

Single Pulse

D=0.05

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s )

Single Pulse

T

=25°C

amb

Pulse P ower Diss ip a tion

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

2 of 7

www.diodes.com

March 2012

© Diodes Incorporated

A

f

)

r

r

g

g

g

)

r

)

Product Line o

Diodes Incorporated

ZXMN10A08E6

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

100

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

ID = 250μA, VGS = 0V

0.5

100 nA

μA

V
VGS = ±20V, VDS = 0V

= 100V, VGS = 0V

DS

ON CHARACTERISTICS

Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)

Diode Forward Voltage (Note 8)
Reverse recovery time (Note 10)

NEW PRODUCT

Reverse recovery charge (Note 10)

V

GS(th

R

DS (ON)

V

g

fs

SD

t

r

Q

r

2.0

⎯ ⎯

⎯
⎯

⎯

⎯

5.0

4.0 V

0.25

0.30
⎯

Ω
S

0.87 0.95 V
27
32

⎯
⎯

ns

nC

ID = 250μA, VDS = VGS
V

= 10V, ID = 3.2A

GS

V

= 6V, ID = 2.6A

GS

V

= 15V, ID = 3.2A

DS

IS = 3.2A, VGS = 0V
I

= 1.2A, di/dt = 100A/μs

S

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Charge (Note 9)
Total Gate Charge (Note 9)

Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)

Notes: 8. Measured under pulsed conditions. Width 300μs. Duty cycle 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

C

iss

C

oss

C

rss

Q

g

Q

⎯

Q

⎯

s

Q

⎯

d

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

⎯
⎯
⎯

⎯

405

28.2

14.2

4.2

7.7

1.8

2.1

3.4

2.2
8

3.2

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC

nC
nC

ns
ns
ns
ns

V

= 50V, VGS = 0V

DS

f = 1MHz
V

= 5V, VDS = 50V

GS

I

= 1.2A

D

V

= 10V, VDS = 50V

GS

I

= 1.2A

D

V

= 30V, VGS = 10V

DD

= 1.2A, RG ≅ 6.0Ω

I

D

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

3 of 7

www.diodes.com

March 2012

© Diodes Incorporated

A

f

Typical characteristics

Product Line o

Diodes Incorporated

ZXMN10A08E6

NEW PRODUCT

10V

5V

4.5V

4V

V

3.5V

Drain Current (A)
I

0.1

D

0.01

T = 2 5°C

10

1

0.1 1 10

VDS Drain-Source Vol tage (V)

Outpu t C h aracteristics

VDS = 10V

T = 150°C

1

T = 25°C

0.1

Drain Current (A)

D

I

345

T = -5 5°C

VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

T = 150°C

10

1

GS

Drain Current (A)

D

I

0.01

0.1

0.1 1 10

10V

5V

4.5V
4V

3.5V

3V

V

GS

VDS Drain -So urce Vol tag e (V)

Outpu t Ch aracteristics

2.0

1.8

GS(th)

1.6

1.4

and V

1.2

DS(on)

1.0

0.8

0.6

Normalised R

0.4

-50 0 50 100 150

Tj Junction Temperature (°C)

VGS = V

DS

ID = 250uA

VGS = 10V
ID = 3.2A

R

V

DS(on)

GS(th)

Normalised Curves v Temperature

100

3.5V

10

1

Drain-Source On-Resistance (Ω)

0.1

0.01 0.1 1 10

DS(on)

R

V

4V

GS

ID Drain Cu rre nt (A)

T = 25°C

4.5V

5V

10V

On-Resistance v Drain Current

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

4 of 7

www.diodes.com

10

T = 150°C

1

T = 25°C

Reverse Drain Current (A)

SD

I

0.01

0.1

0.4 0.6 0.8 1.0

V

Source-Drain Vol tage (V)

SD

Source-Drain Diode Forward Voltage

March 2012

© Diodes Incorporated

A

f

Typical characteristics - Continued

Product Line o

Diodes Incorporated

ZXMN10A08E6

NEW PRODUCT

600

500
400

300
200

100

C

ISS

VGS = 0V
f = 1MHz

C

OSS

C

RSS

C Capacitance (pF)

0

0.1 1 10 100

VDS - Drain - Sou rce Vol tage (V)

Capacitance v Drain-Source Voltage

10

ID = 1.2A

8

6

4

2

VDS = 50V

0

Gate-Source Voltage (V)

012345678

GS

V

Q - Charge (nC)

Gate-Source Voltag e v Gate Charge

Test Circuits

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

5 of 7

www.diodes.com

March 2012

© Diodes Incorporated

A

f

Package Outline Dimensions

NEW PRODUCT

K

J

Suggested Pad Layout

Product Line o

Diodes Incorporated

ZXMN10A08E6

A

Dim Min Max Typ

B C

H

M

C2

L

C2

C1

Dimensions Value (in mm)

Z 3.20
G 1.60
X 0.55
Y 0.80

C1 2.40
C2 0.95

D

G

Z

Y

X

SOT26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40

M 0.10 0.20 0.15

0° 8°

α

All Dimensions in mm

0.95

⎯

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

6 of 7

www.diodes.com

March 2012

© Diodes Incorporated

A

f

Product Line o

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

NEW PRODUCT

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

ZXMN10A08E6

ZXMN10A08E6

Datasheet Number: DS31909 Rev. 8 – 2

7 of 7

www.diodes.com

March 2012

© Diodes Incorporated