Diodes ZXMN10A08DN8 User Manual

100V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN10A08DN8

SUMMARY
V

(BR)DSS

= 100V; R

DS(ON)

= 0.25 ID= 2.1A

DESCRIPTION

This newgeneration of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

8

O

S

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN10A08DN8TA 7” 12mm 500 units
ZXMN10A08DN8TC 13” 12mm 2,500 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
10A08D

ISSUE 4 - JANUARY 2005

PINOUT

Top View

1

SEMICONDUCTORS

ZXMN10A08DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V
Gate source voltage V
Continuous drain current V

=10V; TA=25°C

GS

VGS=10V; TA=70°C

VGS=10V; TA=25°C
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T

Linear derating factor
Power dissipation at T

Linear derating factor

(c)

=25°C

A

=25°C

A

(b)

(c)

(a)

(b)

Operating and storage temperature range T

(b)
(b)
(a)

DSS
GS

I

D

I

DM

I

S

I

SM

P

D

P

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient (a) R
Junction to ambient (b) R

θJA

θJA

100 V

20 V

2.1

1.7

1.6
9A

2.6 A
9A

1.25
10

mW/°C

1.8

14.5

mW/°C

-55 to +150 °C

100 °C/W

69 °C/W

A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph

ISSUE 4 - JANUARY 2005

SEMICONDUCTORS

2

TYPICAL CHARACTERISTICS

ZXMN10A08DN8

ISSUE 4 - JANUARY 2005

3

SEMICONDUCTORS

ZXMN10A08DN8

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

A

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state resistance

Forward transconductance

DYNAMIC

(3)

(1)(3)

(1)

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

SWITCHING

(2) (3)

Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate charge Q

Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

100 V ID=250␮A, VGS=0V

0.5 ␮AVDS=100V, VGS=0V

100 nA VGS=⫾20V, VDS=0V

2.0 V ID=250␮A, VDS=V

0.25

0.30

⍀
⍀

=10V, ID=3.2A

V

GS

V

=6V, ID=2.6A

GS

5.0 S VDS=15V,ID=3.2A

405 pF

V

=50 V, VGS=0V,

28.2 pF

DS

f=1MHz

14.2 pF

3.4 ns

2.2 ns
8ns

=30V, ID=1.2A

V

DD

R

≅6.0⍀,VGS=10V

G

3.2 ns

4.2 nC VDS=50V,VGS=5V,

I

=1.2A

D

7.7 nC

1.8 nC

2.1 nC

=50V,VGS=10V,

V

DS

I

=1.2A

D

SOURCE-DRAIN DIODE

Diode forward voltage

Reverse recovery time
Reverse recovery charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.87 0.95 V TJ=25°C, IS=3.2A,
V

=0V

GS

27 ns TJ=25°C, IF=1.2A,
32 nC

di/dt= 100A/␮s

GS

NOTES:

(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

ISSUE 4 - JANUARY 2005

TYPICAL CHARACTERISTICS

ZXMN10A08DN8

ISSUE 4 - JANUARY 2005

5

SEMICONDUCTORS

ZXMN10A08DN8

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

ISSUE 4 - JANUARY 2005

6

ZXMN10A08DN8

PACKAGE OUTLINE

CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Min Max Min Max Min Max

DIM

Millimeters Inches

A 1.35 1.75 0.053 0.069 e 1.27 BSC 0.050 BSC

A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020

D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010
H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8°
E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 - ----

© Zetex Semiconductors plc 2005

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Thispublication isissued toprovide outline information only which (unless agreed by the Company inwriting) maynot beused, appliedor reproduced

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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product information, log on towww.zetex.com

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USA

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ISSUE 4 - JANUARY 2005

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SEMICONDUCTORS