Diodes ZXMN10A08DN8 User Manual
100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A08DN8
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.25 ID= 2.1A
DESCRIPTION
This newgeneration of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
8
O
S
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN10A08DN8TA 7” 12mm 500 units
ZXMN10A08DN8TC 13” 12mm 2,500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMN
10A08D
ISSUE 4 - JANUARY 2005
PINOUT
Top View
1
SEMICONDUCTORS
ZXMN10A08DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate source voltage V
Continuous drain current V
=10V; TA=25°C
GS
VGS=10V; TA=70°C
VGS=10V; TA=25°C
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
(c)
=25°C
A
=25°C
A
(b)
(c)
(a)
(b)
Operating and storage temperature range T
(b)
(b)
(a)
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R
Junction to ambient (b) R
θJA
θJA
100 V
20 V
2.1
1.7
1.6
9A
2.6 A
9A
1.25
10
mW/°C
1.8
14.5
mW/°C
-55 to +150 °C
100 °C/W
69 °C/W
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
2
TYPICAL CHARACTERISTICS
ZXMN10A08DN8
ISSUE 4 - JANUARY 2005
3
SEMICONDUCTORS
Loading...