Diodes ZXMN10A07Z User Manual

f

D

100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE

Product Summary

V

R

(BR)DSS

100V

700mΩ @ V

900mΩ @ VGS = 6V

DS(on)

Max

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• DC-DC Converters

• Power Management functions

ADVANCE INFORMATION

• Motor control

• Disconnect switches

SOT89

Top View

I

max

D

T

= 25°C

A

(Note 6)

1.4A

1.2A

G

Features and Benefits

• Low On-Resistance

• Low Threshold

• Fast Switching Speed

• Low Gate Drive

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.052 grams (approximate)

S

Device symbol

A Product Line o

Diodes Incorporated

ZXMN10A07Z

UL Flammability Classification Rating 94V-0

Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN10A07ZTA 7N10 7 12 1,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. <1000ppm antimony compounds.

Marking Information

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

7N10

7N10 = Product type Marking Code

1 of 7

www.diodes.com

June 2012

f

Diodes Incorporated

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Steady

State

Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7)

@ V @ V @ V

= 10V; T

GS

= 10V; T

GS

= 10V; T

GS

= 25°C (Note 6)

A

= 70°C (Note 6)

A

= 25°C (Note 5)

A

V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.

7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

PD P

D

R

JA

R

JA

R

JL

T

, T

J

STG

A Product Line o

ZXMN10A07Z

100 V ±20 V

1.4

1.1

1.0

4.2 A

2.1 A

4.2 A

1.5 12

2.6 21

83.3 °C/W

47.4 °C/W

6.36 °C/W

-55 to +150 °C

A

W

mW/°C

W

mW/°C

Thermal Characteristics

10

R

DS(on)

Limited

1

DC

100m

Drain Current (A)

D

I

10m

90 80 70 60 50 40 30 20 10

0

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

1s

Single Pulse T

=25°C

amb

110100

VDS Drain-Source Voltage (V)

Safe Operating Area

T

=25°C

amb

D=0.5

D=0.2

Transient Thermal Impedance

100ms

10ms

1ms

Pulse Width (s)

100µs

D=0.1

Single Pulse

D=0.05

1.50

1.25

1.00

0.75

0.50

0.25

0.00

Max Power Dissipation (W)

0 20406080100120140160

Temperature (°C)

Derating Curve

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse T

amb

Pulse Power Dissipation

=25°C

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

2 of 7

www.diodes.com

June 2012

f

)

g

r

)

r

)

Diodes Incorporated

ZXMN10A07Z

A Product Line o

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

100 - - V

- - 1.0

- - 100 nA

VGS = 0V, ID = 250A

μA

= 100V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9) Forward Transconductance (Note 9 & 11)

Diodes Forward Voltage (Note 9)

V

GS(th

R

DS (ON)

g

V

FS SD

2 - 4 V

-

- 700

-

900

- 1.6 - S

- 0.85 0.95 V

VDS = VGS, ID = 250A

= 10V, ID = 1.5A

V

mΩ

GS

V

= 6V, ID = 1A

GS

VDS = 15V, ID = 1A

TJ = 25°C, IS = 1.5A, VGS = 0V DYNAMIC CHARACTERISTICS Input Capacitance (Note 10 & 11) Output Capacitance (Note 10 & 11) Reverse Transfer Capacitance (Note 10 & 11) Gate Resistance (Note 10 & 11) Total Gate Charge (Note 10 & 11)

ADVANCE INFORMATION

Gate-Source Charge (Note 10 & 11) Gate-Drain Charge (Note 10 & 11) Reverse Recovery Time (Note 11) Reverse Recovery Charge (Note 11) Turn-On Delay Time (Note 10 & 11) Turn-On Rise Time (Note 10 & 11) Turn-Off Delay Time (Note 10 & 11) Turn-Off Fall Time (Note 10 & 11)

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.

10. Switching characteristics are independent of operating junction temperature.

11. For design aid only, not subject to production testing.

C C

t

C

oss rss

R

Q Q Q

t

Q

D(on

t

D(off

t

iss

s d

r

f

- 138 - pF

- 12 - pF

- 6 - pF

1.8 - 2.6 

- 2.9 - nC

- 0.7 - nC

- 1 - nC 27 ns 12 nC

- 1.8 - ns

- 1.5 - ns

- 4.1 - ns

- 2.1 - ns

V

= 50V, VGS = 0V,

DS

f = 1.0MHz f = 1MHz, VGS = 0V, VDS = 0V V

= 10V, VDS = 50V,

GS

= 1A

I

D

T

= 25°C, IF = 1A,

J

di/dt = 100A/μs

V

= 10V, VDD = 50V,

GS

R

= 6 , ID = 1A

G

]

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

3 of 7

www.diodes.com

June 2012

f

Typical Characteristics

T = 25°C

1

0.1

0.01

Drain Current (A)

D

I

ADVANCE INFORMATION

0.1 1 10

10V

7V

V

VDS Drain-Source Voltage (V)

Output Characteristics

4.5V

GS

4V

6V

5V

Drain Current (A)

D

I

0.01

Diodes Incorporated

T = 150°C

1

0.1

0.1 1 10

VDS Drain-Source Voltage (V)

Output Characteristics

A Product Line o

ZXMN10A07Z

10V

7V

6V

5V

4.5V

4V

V

GS

3.5V

1

T = 150°C

Drain Current (A) I

D

0.1

0.01 3456

T = 25°C

VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

10

4.5V

1

T = 25°C

Drain-Source On-Resistance (Ω)

0.01 0.1 1

DS(on)

R

ID Drain Current (A)

5V

On-Resistance v Drain Current

VDS = 10V

6V

V

7V

10V

2.0

1.8

1.6

GS(th)

1.4

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

0.2

Normalised R

0.0

-50 0 50 100 150

VGS = 10V ID = 1.5A

VGS = V

DS

ID = 250uA

R

DS(on)

V

GS(th)

Tj Junction Temperature (°C)

Normalised Curves v Temperature

10

GS

T = 150°C

1

T = 25°C

0.1

Reverse Drain Current (A)

SD

I

0.4 0.6 0.8 1.0 1.2

VSD Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

4 of 7

www.diodes.com

June 2012

f

Typical Characteristics - Continued

ADVANCE INFORMATION

A Product Line o

Diodes Incorporated

ZXMN10A07Z

Test Circuits

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

5 of 7

www.diodes.com

June 2012

f

Package Outline Dimensions

E

B1

ADVANCE INFORMATION

Suggested Pad Layout

Y3

Y

8° (4X)

X (3x)

D1

D

B

e

X1

X2 (2x)

A Product Line o

Diodes Incorporated

ZXMN10A07Z

0

2

.

0

R

1

H

L

A

Y1

Y4

Y2

C

Dim Min Max

H

Dimensions Value (in mm)

A 1.40 1.60 B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44 D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60

H 3.94 4.25

H1 2.63 2.93

X 0.900 X1 1.733 X2 0.416

Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125

C 1.500

SOT89

e 1.50 Typ

L 0.89 1.20 All Dimensions in mm

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

6 of 7

www.diodes.com

June 2012

f

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

ZXMN10A07Z

A Product Line o

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

7 of 7

www.diodes.com

June 2012