Diodes ZXMN10A07Z User Manual
f
D
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE
Product Summary
V
R
(BR)DSS
100V
700mΩ @ V
900mΩ @ VGS = 6V
DS(on)
Max
= 10V
GS
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
• DC-DC Converters
• Power Management functions
ADVANCE INFORMATION
• Motor control
• Disconnect switches
SOT89
Top View
I
max
D
T
= 25°C
A
(Note 6)
1.4A
1.2A
G
Features and Benefits
• Low On-Resistance
• Low Threshold
• Fast Switching Speed
• Low Gate Drive
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (approximate)
S
Device symbol
A Product Line o
Diodes Incorporated
ZXMN10A07Z
UL Flammability Classification Rating 94V-0
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN10A07ZTA 7N10 7 12 1,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
7N10
7N10 = Product type Marking Code
1 of 7
www.diodes.com
June 2012
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Diodes Incorporated
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
@ V
@ V
@ V
= 10V; T
GS
= 10V; T
GS
= 10V; T
GS
= 25°C (Note 6)
A
= 70°C (Note 6)
A
= 25°C (Note 5)
A
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
PD
P
D
R
JA
R
JA
R
JL
T
, T
J
STG
A Product Line o
ZXMN10A07Z
100 V
±20 V
1.4
1.1
1.0
4.2 A
2.1 A
4.2 A
1.5
12
2.6
21
83.3 °C/W
47.4 °C/W
6.36 °C/W
-55 to +150 °C
A
W
mW/°C
W
mW/°C
Thermal Characteristics
10
R
DS(on)
Limited
1
DC
100m
Drain Current (A)
D
I
10m
90
80
70
60
50
40
30
20
10
0
Thermal Resistance (°C/W)
100µ 1m 10m 100m 1 10 100 1k
1s
Single Pulse
T
=25°C
amb
110100
VDS Drain-Source Voltage (V)
Safe Operating Area
T
=25°C
amb
D=0.5
D=0.2
Transient Thermal Impedance
100ms
10ms
1ms
Pulse Width (s)
100µs
D=0.1
Single Pulse
D=0.05
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Max Power Dissipation (W)
0 20406080100120140160
Temperature (°C)
Derating Curve
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
T
amb
Pulse Power Dissipation
=25°C
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
2 of 7
www.diodes.com
June 2012
© Diodes Incorporated
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Diodes Incorporated
ZXMN10A07Z
A Product Line o
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
100 - - V
- - 1.0
- - 100 nA
VGS = 0V, ID = 250A
μA
= 100V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Note 9 & 11)
Diodes Forward Voltage (Note 9)
V
GS(th
R
DS (ON)
g
V
FS
SD
2 - 4 V
-
- 700
-
900
- 1.6 - S
- 0.85 0.95 V
VDS = VGS, ID = 250A
= 10V, ID = 1.5A
V
mΩ
GS
V
= 6V, ID = 1A
GS
VDS = 15V, ID = 1A
TJ = 25°C, IS = 1.5A, VGS = 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10 & 11)
Output Capacitance (Note 10 & 11)
Reverse Transfer Capacitance (Note 10 & 11)
Gate Resistance (Note 10 & 11)
Total Gate Charge (Note 10 & 11)
ADVANCE INFORMATION
Gate-Source Charge (Note 10 & 11)
Gate-Drain Charge (Note 10 & 11)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
Turn-On Delay Time (Note 10 & 11)
Turn-On Rise Time (Note 10 & 11)
Turn-Off Delay Time (Note 10 & 11)
Turn-Off Fall Time (Note 10 & 11)
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
C
C
t
t
C
oss
rss
R
Q
Q
Q
t
Q
D(on
t
D(off
t
iss
s
d
r
r
f
- 138 - pF
- 12 - pF
- 6 - pF
1.8 - 2.6
- 2.9 - nC
- 0.7 - nC
- 1 - nC
27 ns
12 nC
- 1.8 - ns
- 1.5 - ns
- 4.1 - ns
- 2.1 - ns
V
= 50V, VGS = 0V,
DS
f = 1.0MHz
f = 1MHz, VGS = 0V, VDS = 0V
V
= 10V, VDS = 50V,
GS
= 1A
I
D
T
= 25°C, IF = 1A,
J
di/dt = 100A/μs
V
= 10V, VDD = 50V,
GS
R
= 6 , ID = 1A
G
]
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
3 of 7
www.diodes.com
June 2012
© Diodes Incorporated
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