Diodes ZXMN0545G4 User Manual
450V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This 450V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
= 450V; R
= 50 ; ID= 140mA
DS(ON)
ZXMN0545G4
FEATURES
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
•
SOT223 package variant engineered to increase spacing between
high voltage pins
APPLICATIONS
•
Off-line power supply start-up circuitry
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
ZXMN0545G4TA 7 12mm embossed 1,000 units
ZXMN0545G4TC 13 12mm embossed 4,000 units
TAPE WIDTH (mm) QUANTITY
PER REEL
DEVICE MARKING
ZXMN
0545
3
2
2
T
O
S
N/C
PINOUT - TOP VIEW
ISSUE 1 - JANUARY 2006
1
ZXMN0545G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
Pulsed Drain Current
(c)
=10V; T
GS
amb
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
amb
=25°C
(c)
(a)
=25°C)
(b)
(a)
I
I
I
I
P
DS
GS
D
DM
S
SM
tot
Linear derating factor
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tⱕ5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(a)
(b)
R
θJA
R
θJA
450 V
⫾20
140 mA
600 mA
140 A
600 A
2.0
1.6
mW/°C
62.5 °C/W
32 °C/W
V
W
ISSUE 1 - JANUARY 2006
2
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