Diodes ZXMHN6A07T8 User Manual
60 V N- CHA NNE L M OS F ET H- BR I D GE
SUMM ARY
ZXMHN6A07T8
V
(BR)DSS
= 60V : R
= 0.3 ; ID= 1.6A
DS(on)
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance w ith fast switching speed. This
makes them ideal for high efficiency, low voltage,
powe r management applications .
FEATURES
Compac t pack a ge
·
Low on stat e losses
·
Low drive requirement s
·
Operates up to 60V
·
·
1 A mp c ont inuous rat ing
APPLICATIONS
·
Motor cont rol
ORDERING INFORMATION
DEVICE REEL
ZXMHN6A07T8TA
ZXMHN6A07 T8 TC 13” 12mm 4,000 units
SIZE
7”
TAPE
WIDTH
12mm 1,000 units
QUANTITY PER
REEL
SM8
PINOUT
DEVICE MARKIN G
·
ZXMH
N6A07
ISSUE 2 - MAY 2004
TOP VIEW
1
SEMICONDUCTORS
ZXMHN6A07T8
ABS OLUT E MA X IMUM RA T I NGS
PAR AMET ER SYMBO L LIMIT UNIT
Drain- sourc e voltage V
Gat e-source voltage V
Continuous drain current (V
= 10V; TA= 25° C)
GS
(VGS= 10V; TA= 70° C)
(VGS= 10V; TA= 25° C)
Pulsed drain current
(c)
Continuous source c urre nt (body diode)
= 25° C
A
(a) (e)
(a) (e)
(c)
(a)
Pulsed source curre nt (body diode)
Total powe r dissipation at T
Any Single t ransistor "on"
Single transistor ‘on’
(a) (d)
(b) (d)
Two transistors ‘on’ equally
Linear derating factor above 2 5°C
Single transistor "on"
Single transistor ‘on’
(a) (d)
(b) (d)
Two transistors ‘on’ equally
(b) (d)
(b) (d)
(a) (d)
(b) (d)
Thermal resis tance - junction to ambient
Single transistor "on"
Single transistor "on"
Two transistors ‘on’ equally
(a) (d)
(b) (d)
(a) (e)
Operating and storage temperature range T
(a) For a devic e mounte d on 50 mm x 50mm x 1 . 6 mm FR4 PC B wit h a high c ov era ge of s ingle s ided 2 oz w eight copper in s t ill air conditions with the
heat s ink split into t hree equal a reas , one f or ea c h drain connec tion.
(b) F or a dev ic e surfac e mount ed on a FR 4 PC B a t t ⬍ = 10 sec.
(c ) R epetit ive rat i ng on 50 mm x 50 mm x 1. 6mm FR4 PC B, dut y c y c le 2 % , pulse w idt h 300S in still air c onditions w ith t he he at s ink s plit into t hree
equal areas , one f or e ac h dra in c onnect ion.
(d) F or dev ic e wit h one act iv e die.
(e) F or any t wo die not s haring t he sa me drain c onnect ion.
DSS
GS
I
D
I
DM
I
S
I
SM
P
TOT
R
th(j-amb)
j,Tstg
60 V
±20 V
1.6
1.3
1.4
A
A
A
9A
1A
9A
1.1
1.4
1.6
8.8
11.2
13.2
114
89
76
W
W
W
mW/° C
mW/° C
mW/° C
°C/W
°C/W
°C/W
-55 to + 150 °C
SEMICONDUCTORS
ISSUE 2 - MAY 2004
2
CHARACTERISTICS
ZXMHN6A07T8
ISSUE 2 - MAY 2004
3
SEMICONDUCTORS
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