Diodes ZXMHC6A07T8 User Manual
ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel V
P-Channel V
(BR)DSS
(BR)DSS
= 60V; R
= -60V; R
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
= 0.300 ;ID= 1.8A
DS(ON)
= 0.425 ;ID= -1.5A
DS(ON)
FEATURES
Low On - Resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
SM8 package
APPLICATIONS
•
Motor drive
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMHC6A07T8TA 7
ZXMHC6A07T8TC 13’‘ 12mm
TAPE
WIDTH
’‘ 12mm
DEVICE MARKING
•
ZXMH
C6A07
QUANTITY
PER REEL
1000 units
4000 units
G
1
D,1D
G
2
SM8
S
1
2
S
2
PINOUT DIAGRAM
S
S
4
D,3D
3
G
4
4
G
3
ISSUE 2 - MAY 2005
Top View
1
ZXMHC6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V
=10V; TA=25⬚C
GS
@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a)(d)
(b)(d)
(b)(d)
(a)(d)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b)(d)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(d)
R
θJA
R
θJA
60 -60 V
⫾20 ⫾20 V
1.8
1.4
1.6
-1.5
-1.2
-1.3
8.4 -7.2 A
2.3 -2.1 A
8.4 -7.2 A
1.3
10.4
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
94.5 °C/W
73.3 °C/W
A
A
W
W
Notes:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with
the heatsink split into two equal areas, one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300s pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
ISSUE 2 - MAY 2005
2
TYPICAL CHARACTERISTICS
ZXMHC6A07T8
ISSUE 2 - MAY 2005
3
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