Diodes ZXMHC3A01T8 User Manual

ZXMHC3A01T8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY
N-Channel = V

P-Channel = V

(BR)DSS

(BR)DSS

= 30V : R

= -30V : R

DESCRIPTION

This new generation of trench MOSFETs from Zetex
utilizesauniquestructurethatcombinesthebenefitsof
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

•

Low gate drive

•

Single SM-8 surface mount package

= 0.12 ; ID= 3.1A

DS(on)

= 0.21 ; ID= -2.3A

DS(on)

G

1

D,1D

SM8

S

1

2

S

4

D,3D

G

4

4

APPLICATIONS

•

Single phase DC fan motor drive

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMHC3A01T8TA 7” 12mm 1,000 units
ZXMHC3A01T8TC 13” 12mm 4,000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMH
C3A01

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G

2

S

2

S

G

3

3

PINOUT

Top View

1

SEMICONDUCTORS

ZXMHC3A01T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-channel UNIT

Drain-source voltage V
Gate-source voltage V
Continuous drain current (V

= 10V; TA=25°C)

GS

(b)(d)

(VGS= 10V; TA=70°C)

(VGS= 10V; TA=25°C)
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T

(c)

=25°C

A

(b)

(c)

(a) (d)

(b)(d)

(a)(d)

I

I
I
I
P

DSS

GS

D

DM
S
SM

D

Linear derating factor
Power dissipation at T

A

=25°C

(b) (d)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300␮S - pulse width limited by maximum junction temperature. Refer

to transient thermal impedance graph.

(d) For device with one active die.

(a) (d)

(b) (d)

R

␪JA

R

␪JA

30 -30 V

±20 ±20 V

3.1

2.5

2.7

-2.3

-1.8

-2.0

14.5 -10.8 A

2.3 -2.2 A

14.5 -10.8 A

1.3

10.4

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

96 °C/W
73 °C/W

A
A
A

W

W

SEMICONDUCTORS

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2

CHARACTERISTICS

ZXMHC3A01T8

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SEMICONDUCTORS

ZXMHC3A01T8

N-channel
ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state

resistance
Forward transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

SWITCHING

(2) (3)

Turn-on-delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate drain charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

30 V ID= 250␮A, VGS=0V

1.0 ␮AVDS=30V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 3.0 V ID= 250␮A, VDS=V

0.12

0.18

⍀

VGS= 10V, ID= 2.5A
V

⍀

= 4.5V, ID= 2.0A

GS

3.5 S VDS=4.5V, ID= 2.5A

190 pF

38 pF
20 pF

= 25V, VGS=0V

V

DS

f=1MHz

1.7 ns
V

2.3 ns

6.6 ns

= 15V, ID=2.5A

DD

R

≅ 6.0Ω ,VGS= 10V

G

2.9 ns

3.9 nC

0.6 nC

0.9 nC

V

= 15V, VGS= 10V

DS

I

= 2.5A

D

SOURCE-DRAIN DIODE

Diode forward voltage

Reverse recovery time
Reverse recovery charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.95 V Tj=25°C, IS= 1.7A,
V

GS

17.7 ns

13.0 nC

T

j

di/dt=100A/␮s

=0V

=25°C, IS= 2.5A,

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

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N-channel

ZXMHC3A01T8

TYPICAL CHARACTERISTICS

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SEMICONDUCTORS

ZXMHC3A01T8

N-channel

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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P-channel

ZXMHC3A01T8

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state

resistance
Forward transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

SWITCHING

(2) (3)

Turn-on-delay time t
Rise time t
Turn-off delay time t
Fall time t

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

Total gate charge 2.6 nC V

Total gate charge Q
Gate-source charge Q
Gate drain charge Q

g
gs
gd

-30 V ID= -250␮A, VGS=0V

-1.0 ␮AVDS= -30V, VGS=0V
100 nA VGS=±20V, VDS=0V

-1.0 -3.0 V ID= -250␮A, VDS=V

0.21

0.33

⍀

VGS= -10V, ID= -1.4A
V

⍀

= -4.5V, ID= -1.1A

GS

2.5 S VDS= -15V, ID= -1.4A

204 pF VDS= -15V, VGS=0V

39.8 pF

f=1MHz

25.8 pF

1.2 ns VDD= -15V, ID= -1A
R

2.3 ns

≅ 6.0⍀,VGS= -10V

G

12.1 ns

7.5 ns

= -15V, VGS= -5V

DS

I

= -1.4A

D

5.2 nC VDS= -15V, VGS= -10V
I

0.7 nC

= -1.4A

D

0.9 nC

SOURCE-DRAIN DIODE

Diode forward voltage

Reverse recovery time
Reverse recovery charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

-0.85 -0.95 V Tj=25°C, IS= -1.1A,
V

=0V

GS

19 ns Tj=25°C, IS= -0.95A,
15 nC

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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SEMICONDUCTORS

ZXMHC3A01T8

P-channel

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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P-channel

ZXMHC3A01T8

TYPICAL CHARACTERISTICS

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SEMICONDUCTORS

ZXMHC3A01T8

PACKAGE OUTLINE

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Typ. Min Max Typ. Min Max Typ. Min Max Typ.

DIM

A - 1.7 - - 0.067 - e1 - - 4.59 - - 0.1807

A1 0.02 0.1 - 0.008 0.004 - e2 - - 1.53 - - 0.0602

b - - 0.7 - - 0.0275 He 6.7 7.3 - 0.264 0.287 ­c 0.24 0.32 - 0.009 0.013 - Lp 0.9 - - 0.035 - ­D 6.3 6.7 - 0.248 0.264 - ␣ - 15° - - 15° ­E 3.3 3.7 - 0.130 0.145 - ␤ - - 10° - - 10°

Millimeters Inches

© Zetex Semiconductors plc 2004

Europe

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Germany

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[e-mail]

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Thispublicationisissued to provideoutlineinformationonly which (unlessagreedbythe Company inwriting)maynot be used,appliedorreproduced

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DRAFT ISSUE E - APRIL 2004

SEMICONDUCTORS

10