Diodes ZXMHC3A01T8 User Manual

ZXMHC3A01T8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY
N-Channel = V

P-Channel = V

(BR)DSS

(BR)DSS

= 30V : R

= -30V : R

DESCRIPTION

This new generation of trench MOSFETs from Zetex
utilizesauniquestructurethatcombinesthebenefitsof
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

•

Low gate drive

•

Single SM-8 surface mount package

= 0.12 ; ID= 3.1A

DS(on)

= 0.21 ; ID= -2.3A

DS(on)

G

1

D,1D

SM8

S

1

2

S

4

D,3D

G

4

4

APPLICATIONS

•

Single phase DC fan motor drive

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMHC3A01T8TA 7” 12mm 1,000 units
ZXMHC3A01T8TC 13” 12mm 4,000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMH
C3A01

DRAFT ISSUE E - APRIL 2004

G

2

S

2

S

G

3

3

PINOUT

Top View

1

SEMICONDUCTORS

ZXMHC3A01T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-channel UNIT

Drain-source voltage V
Gate-source voltage V
Continuous drain current (V

= 10V; TA=25°C)

GS

(b)(d)

(VGS= 10V; TA=70°C)

(VGS= 10V; TA=25°C)
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T

(c)

=25°C

A

(b)

(c)

(a) (d)

(b)(d)

(a)(d)

I

I
I
I
P

DSS

GS

D

DM
S
SM

D

Linear derating factor
Power dissipation at T

A

=25°C

(b) (d)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300␮S - pulse width limited by maximum junction temperature. Refer

to transient thermal impedance graph.

(d) For device with one active die.

(a) (d)

(b) (d)

R

␪JA

R

␪JA

30 -30 V

±20 ±20 V

3.1

2.5

2.7

-2.3

-1.8

-2.0

14.5 -10.8 A

2.3 -2.2 A

14.5 -10.8 A

1.3

10.4

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

96 °C/W
73 °C/W

A
A
A

W

W

SEMICONDUCTORS

DRAFT ISSUE E - APRIL 2004

2

CHARACTERISTICS

ZXMHC3A01T8

DRAFT ISSUE E - APRIL 2004

3

SEMICONDUCTORS