Diodes ZXMHC10A07T8 User Manual

ZXMHC10A07T8

COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY
N-Channel = V

P-Channel = V

(BR)DSS

(BR)DSS

= 100V : R

= -100V : R

= 0.7 ; ID= 1.4A

DS(on)

= 1.0 ; ID= -1.3A

DS(on)

DESCRIPTION

This newgeneration of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

G

Fast switching speed

•

1

• Low threshold

•

Low gate drive

•

Single SM-8 Surface Mount Package

APPLICATIONS

•

Single Phase DC Fan Motor Drive

D,1D

G

2

M

8

S

S

1

2

S

2

S

S

4

D,3D

3

G

4

4

G

3

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMHC10A07T8TA 7” 12mm 1000 units
ZXMHC10A07T8TC 13” 12mm 4000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMH
C10A7

ISSUE 2 - JUNE 2005

PINOUT

1

SEMICONDUCTORS

ZXMHC10A07T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-channel P-channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current

@V

GS

=10V; TA=25°C

@VGS=10V; TA=70°C
@VGS=10V; TA=25°C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T

=25°C

A

(c)

(a) (d)

(b) (d)
(b) (d)

(a) (d)

(b)

I

I
I
I
P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at T

=25°C

A

(b) (d)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient

NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with

the heat sink split into two equal areas one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300␮s - pulse width limited by maximum junction temperature.

Refer to transiennt thermal impedance graph.
(d) For device with one active die.

(a) (d)

(b) (d)

R
R

⍜JA

⍜JA

100 -100 V

⫾20 ⫾20 V

1.1

0.9

1.0

-0.9

-0.8

-0.8

5.2 -4.5 A

2.3 -2.2 A

5.2 -4.5 A

1.3

10.4

mW/°C

1.3

10.4

mW/°C

-55 to +150 °C

94.5 °C/W

73.3 °C/W

A
A
A

W

W

SEMICONDUCTORS

ISSUE 2 - JUNE 2005

2

TYPICAL CHARACTERISTICS

ZXMHC10A07T8

ISSUE 2 - JUNE 2005

3

SEMICONDUCTORS

ZXMHC10A07T8

N-Channel

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance
Forward Transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input Ca pacitance C
Output Ca pacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Cha rge Q
Gate-Source Charge Q
Gate Drain Charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

100 V ID= 250␮A, VGS=0V

1 ␮AVDS=100V, VGS=0V

100 nA VGS=±20V, VDS=0V

2.0 4.0 V ID= 250␮A, VDS=V

0.7

⍀

VGS=10V,ID=1.5A

=6V,ID=1.0A

0.9

V

⍀

GS

1.6 S VDS=15V,ID=1.0A

138 pF

12 pF

6pF

=60V,VGS=0V

V

DS

f=1MHz

1.8 ns
V

1.5 ns

4.1 ns

=50V,ID=1.0A

DD

≅ 6.0⍀,VGS=10V

R

G

2.1 ns

2.9 nC

0.7 nC

1.0 nC

V

=50V,VGS=10V

DS

=1.0A

I

D

SOURCE-DRAIN DIODE

Diode F orward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.95 V Tj=25°C, IS=1.5A,
V

GS

27 ns
12 nC

T

=25°C, IS=1.8A,

j

di/dt=100A/␮s

=0V

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

SEMICONDUCTORS

ISSUE 2 - JUNE 2005

4

P-Channel

ZXMHC10A07T8

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance
Forward Transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input Ca pacitance C
Output Ca pacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Char ge Q

Total Gate Cha rge Q
Gate-Source Charge Q
Gate Drain Charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

-100 V ID= -250␮A, VGS=0V

-1.0 ␮AVDS= -100V, VGS=0V
100 nA VGS=±20V, VDS=0V

-2.0 -4.0 V ID= -250␮A, VDS=V
1

⍀

VGS=-10V,ID= - 0.6A

=-6V,ID=-0.5A

1.45

V

⍀

GS

1.2 S VDS= -15V, ID=-0.6A

141 pF

13.1 pF

10.8 pF

= -50V, VGS=0V

V

DS

f=1MHz

1.6 ns
V

2.1 ns

5.9 ns

= -50V, ID=-1A

DD

≅ 6.0⍀,VGS=-10V

R

G

3.3 ns

1.6 nC VDS= -50V, VGS=-5V

= -0.6A

I

D

3.5 nC

0.6 nC

1.6 nC

= -50V, VGS=-10V

V

DS

= -0.6A

I

D

SOURCE-DRAIN DIODE

Diode F orward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

-0.85 -0.95 V Tj=25°C, IS= -0.75A,
=0V

V

GS

29 ns
31 nC

T

=25°C, IS=-0.9A,

j

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

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SEMICONDUCTORS

ZXMHC10A07T8

N-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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ZXMHC10A07T8

N-CHANNEL TYPICAL CHARACTERISTICS

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SEMICONDUCTORS

ZXMHC10A07T8

P-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

ISSUE 2 - JUNE 2005

8

ZXMHC10A07T8

P-CHANNEL TYPICAL CHARACTERISTICS

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SEMICONDUCTORS

ZXMHC10A07T8

PACKAGE OUTLINE

PACKAGE DIMENSIONS

DIM

Millimetres Inches

MIN TYP MAX MIN TYP MAX

A

– – 1.7 – – 0.067

A1

0.02 – 0.1 0.0008 – 0.004

b

– 0.7 – – 0.028 –

c

0.24 – 0.32 0.009 – 0.013

D

6.3 – 6.7 0.248 – 0.264

E

3.3 – 3.7 0.130 – 0.145

e1

– 4.59 – – 0.180 –

e2

– 1.53 – – 0.060 –

He

6.7 – 7.3 0.264 – 0.287

Lp

0.9 – – 0.035 – –

α

– – 15° – – 15°

β

– 10° – – 10° –

Controlling dimensions are in millimetres. Approximate conversions are given in inches

© Zetex Semiconductors plc 2005

Europe

Zetex GmbH
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Germany

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[e-mail]

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Thispublication is issued toprovideoutline information only which(unlessagreed by the Companyinwriting)may not beused,appliedor reproduced

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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product information, log on to www.zetex.com

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Zetex Inc
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USA

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[e-mail]

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ISSUE 2 - JUNE 2005

SEMICONDUCTORS

10