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ZXMHC10A07N8
100V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
I
Device V
Q
(BR)DSS
R
G
DS(on)
T
= 25°C
A
D
0.70Ω @ V
= 10V 1.0A
GS
N-CH 100V 2.9nC
0.90Ω @ VGS= 6.0V 0.9A
1.00Ω @ V
= -10V -0.9A
GS
P-CH -100V 3.5nC
1.45Ω @ VGS= -6.0V -0.7A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
Applications
• DC Motor control
• DC-AC Inverters
P1G
P1D/N1D
N1G
P1S/P2S
P2G
P2D/N2D
N2G
N1S/N2S
Ordering information
Device Reel size
(inches)
ZXMHC10A07N8TC 13 12 2,500
Tape width
(mm)
Quantity
per reel
Device marking
ZXMHC
10A07
Issue 1.0 - March 2009 1
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Page 2
Absolute maximum ratings
ZXMHC10A07N8
Parameter Symbol N-
channel P-channel
Drain-Source voltage
Gate-Source voltage
(c)
(b)
(b)
(a)
(f)
Continuous Drain current @ VGS= 10V; TA=25°C
@ V
@ V
= 10V; TA=70°C
GS
= 10V; TA=25°C
GS
@ VGS= 10V; TL=25°C
Pulsed Drain current @ VGS= 10V; TA=25°C
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C
Power dissipation at TA =25°C
(a)
(c)
DSS
V
GS
I
D
I
DM
(b)
I
S
I
SM
P
D
100 -100 V
±20 ±20
1.00
0.80
0.80
0.81
4.30 -3.64 A
0.70 -0.60 A
4.30 -3.64 A
V
Linear derating factor
Power dissipation at TA =25°C
(b)
P
D
Linear derating factor
Power dissipation at TL =25°C
(f)
P
D
Linear derating factor
, T
Operating and storage temperature range
T
j
stg
-0.85
-0.68
-0.68
-0.69
0.87
6.94
1.36
10.9
0.90
7.19
-55 to 150
Unit
V
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter Symbol Value Unit
(f)
(a)
(b)
(d)
(e)
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(b) Same as note (a), except the device is measured at t ≤ 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
R
R
R
R
R
θJA
θJA
θJA
θJA
θJL
144
92
106
254
139
°C/W
°C/W
°C/W
°C/W
°C/W
Issue 1.0 - March 2009 2
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Page 3
Thermal characteristics
ZXMHC10A07N8
10
R
DS(ON)
Limited
1
DC
100m
Drain Current (A)
D
10m
I
1s
100ms
Note (a)
Single Pulse, T
1 10 100
10ms
amb
=25°C
1ms
100us
VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
140
One Active Die
25 x 25mm 1oz
120
100
D=0.5
80
60
D=0.2
40
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
10
R
DS(ON)
Limited
1
DC
100m
Drain Current (A )
D
10m
-I
1s
Note (a)
Single Pulse, T
110100
100ms
amb
10ms
=25°C
1ms
100us
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
1.0
Any one
0.5
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
active die
Derating Curve
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
One Active Die
Single Pulse
=25°C
T
amb
Pulse Width (s)
Pulse P ower Dis s ipation
Issue 1.0 - March 2009 3
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Page 4
)
ZXMHC10A07N8
N-channel electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Capacitance
(c)
(a)
(a) (c)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(b) (c)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
6 pF
C
rss
100 V
0.5 µA
2.0 4.0 V
1.6
138
±100
0.7
0.9
pF
12 pF
nA
Ω
S
= 250μA, VGS= 0V
I
D
V
= 100V, VGS= 0V
DS
= ±20V, VDS= 0V
V
GS
= 250μA, VDS= VGS
I
D
= 10V, ID= 1.5A
V
GS
V
= 6.0V, ID= 1.0A
GS
= 15V, ID= 1.0A
V
DS
V
= 60V, VGS= 0V
DS
f= 1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
(c)
Total Gate charge
Gate-Source charge
Gate-Drain charge
t
d(on
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
1.8 ns
1.5 ns
4.1 ns
2.1 ns
2.9 nC
0.7 nC
1.0 nC
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
(a)
(c)
(c)
V
SD
t
rr
Q
rr
0.95 V
27 ns
12 nC
V
= 50V, VGS= 10V
DD
= 1.0A
I
D
R
≅ 6.0Ω,
G
V
=50V, VGS= 10V
DS
I
= 1.0A
D
I
= 1.5A, VGS= 0V
S
= 1.8A, di/dt= 100A/μs
I
S
Issue 1.0 - March 2009 4
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Page 5
N-channel typical characteristics
ZXMHC10A07N8
Drain Current (A)
D
I
T = 25°C
1
0.1
0.01
0.1 1 10
10V
7V
VDS Drain-Source Voltage (V)
Output Characteristics
1
T = 150°C
0.1
Drain Current (A)
D
I
0.01
3456
T = 25°C
VDS = 10V
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
10V
Drain Current (A)
D
I
0.01
T = 150°C
1
0.1
0.1 1 10
6V
5V
4.5V
V
GS
4V
7V
6V
5V
4.5V
4V
V
GS
3.5V
VDS Drain-Source Voltage (V)
Output Characteristics
2.0
1.8
1.6
GS(th)
1.4
1.2
and V
1.0
DS(on)
0.8
0.6
0.4
0.2
Normalised R
0.0
-50 0 50 100 150
VGS = 10V
ID = 1.5A
VGS = V
DS
ID = 250uA
R
DS(on)
V
GS(th)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
4.5V
1
T = 25°C
Drain-Source On-Resistance (Ω)
0.01 0.1 1
DS(on)
R
ID Drain Current (A)
5V
On-Resistance v Drain Current
6V
V
GS
7V
10V
Reverse Drain Current (A)
SD
I
Source-Drain Diode Forward Voltage
Issue 1.0 - March 2009 5
© Diodes Incorporated
10
T = 150°C
1
T = 25°C
0.1
0.4 0.6 0.8 1.0 1.2
VSD Source-Drain Voltage (V)
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Page 6
N-channel typical characteristics –continued
ZXMHC10A07N8
C Capacitance (pF)
Capacitance v Drain-Source Voltage
Test circuits
V
G
200
180
160
140
120
100
80
60
40
20
0
C
ISS
C
OSS
1 10 100
VDS - Drain - Source Voltage (V)
Q
G
Q
GS
Q
GD
VGS = 0V
f = 1MHz
C
RSS
10
ID = 1.0A
8
6
4
2
Gate-Source Voltage (V)
0
GS
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Current
regulator
12V
50k
I
G
V
VDS = 50V
Same as
D.U.T
V
DS
D.U.T
I
GS
D
Charge
Basic gate charge waveform
V
DS
90%
10%
V
GS
t
d(on)tr
t
(on)
t
d(off)
t
r
t
(on)
Switching time waveforms
Issue 1.0 - March 2009 6
© Diodes Incorporated
Gate charge test circuit
R
D
V
GS
R
G
V
Switching time test circuit
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DS
V
DD
Page 7
)
ZXMHC10A07N8
P-channel electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Capacitance
(c)
(a)
(a) (c)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(b) (c)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
10.8 pF
C
rss
-100 V
-0.5 µA
-2.0 -4.0 V
1.2
141
±100
1.0
1.45
pF
13.1 pF
nA
Ω
S
= -250μA, VGS= 0V
I
D
V
= -100V, VGS= 0V
DS
= ±20V, VDS= 0V
V
GS
= -250μA, VDS= VGS
I
D
= -10V, ID= -0.6A
V
GS
V
= -6.0V, ID= -0.5A
GS
= -15V, ID= -0.6A
V
DS
V
= -50V, VGS= 0V
DS
f= 1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
(c)
Total Gate charge
Gate-Source charge
Gate-Drain charge
t
d(on
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
1.6 ns
2.1 ns
5.9 ns
3.3 ns
3.5 nC
0.6 nC
1.6 nC
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
(a)
(c)
(c)
V
SD
t
rr
Q
rr
-0.85 -0.95 V
29 ns
31 nC
V
= -50V, VGS= -10V
DD
= -1.0A
I
D
R
≅ 6.0Ω
G
V
= -50V, VGS= -10V
DS
I
= -0.6A
D
I
= -0.7A, VGS= 0V
S
= -0.9A, di/dt= 100A/μs
I
S
Issue 1.0 - March 2009 7
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Page 8
P-channel typical characteristics
ZXMHC10A07N8
Drain Current (A )
D
-I
10
T = 25°C
1
0.1
0.01
1E-3
0.1 1 10
10V
-VDS Drain-Source Voltage (V)
Output Characteristics
1
T = 150°C
T = 25°C
0.1
Drain Current (A)
D
-I
0.01
345
-VDS = 10V
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
7V
5V
4.5V
4V
3.5V
-V
10
T = 150°C
1
0.1
0.01
GS
Drain Current (A )
D
-I
1E-3
0.1 1 10
10V
7V
5V
4.5V
4V
3.5V
3V
-V
GS
-VDS Drain- So urce Vol ta ge (V)
Output Characteristics
2.2
2.0
GS(th)
1.8
1.6
and V
1.4
1.2
DS(on)
1.0
0.8
0.6
Normalised R
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
VGS = -10V
ID = - 0.6A
VGS = V
DS
ID = -250uA
R
V
DS(on)
GS(th)
Normalised Curves v Tem p erature
3.5V
100
10
1
Drain-Source On-Resistance (Ω)
0.01 0.1 1 10
DS(on)
R
On-Resistance v D rain Current
-V
GS
4V
4.5V
-ID Drain Current (A)
T = 25°C
5V
7V
10V
Reverse Drain Current (A)
-I
Source-Drain Diode Forward Voltage
Issue 1.0 - March 2009 8
© Diodes Incorporated
10
T = 150°C
0.2 0.4 0.6 0.8 1.0 1.2
Source-Drain Voltage (V)
-V
SD
0.1
SD
0.01
1
T = 25°C
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Page 9
C
g
P-channel typical characteristics –continued
ZXMHC10A07N8
200
150
100
50
C Capacitance (pF)
0
0.1 1 10 100
Capacitance v Drain-Source Voltage
Test circuits
V
G
C
ISS
C
OSS
C
RSS
-VDS - Drain - Source Voltage (V)
Q
G
Q
GS
Q
GD
VGS = 0V
f = 1MHz
10
ID = -0.6A
8
6
4
2
Gate-Source Voltage (V)
0
01234
GS
-V
Q - Charge (nC)
VDS = -50V
Gate-Source Voltage v Gate Charge
urrent
regulator
12V
0.2F
50k
Same as
D.U.T
I
G
D.U.T
V
GS
I
V
DS
D
Charge
Basic gate charge waveform
t
tr t
t
(on)
d(off)
t
d(on)
r
t
(on)
V
DS
90%
10%
V
GS
Switching time waveforms
Issue 1.0 - March 2009 9
© Diodes Incorporated
Gate charge test circuit
R
V
GS
R
G
Pulse width ⬍ 1S
Duty factor 0.1%
Switchin
time test circuit
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D
V
DS
V
DD
Page 10
Packaging details - SO8
ZXMHC10A07N8
DIM Inches Millimeters DIM Inches Millimeters
Min. Max. Min. Max. Min. Max. Min.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8°
E 0.150 0.157 3.80 4.00 - - - - L 0.016 0.050 0.40 1.27 - - - - -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Max.
Issue 1.0 - March 2009 10
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Page 11
ZXMHC10A07N8
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF ME RCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related
requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
Issue 1.0 - March 2009 11
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