Diodes ZXMD63P02X User Manual

ZXMD63P02X

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63P02XTA 7 12mm embossed 1000 units

ZXMD63P02XTC 13 12mm embossed 4000 units

=-20V; R

DS(ON)

(inches)

=0.27V; ID=-1.7A

TAPE WIDTH (mm) QUANTITY

PER REEL

MSOP8

Top View

DEVICE MARKING

• ZXM63P02

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ZXMD63P02X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V Gate- Source Voltage V Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

DSS

GS

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

-20 V

± 12

-1.7

-1.35

-9.6 A

-1.4 A

-9.6 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25 10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V A

W

NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.

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CHARACTERISTICS

ZXMD63P02X

100

Refer Note (a)

10

1

ID - Drain Current (A)

0.1

DC

1s

100ms

10ms

1ms

100µs

0.1 10 100

1

VDS- Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer N ote (b)

Single Pu lse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer N ote (b) Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

0 80 160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

D=0.5

D=0.2

D=0.1

D=0. 05

Refer Note (a )

Single Pu lse

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

Pulse Width (s)

Transient Thermal Impedance

100

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